Перегляд за Автор "Bugayev, Ye. A."
Зараз показуємо 1 - 3 з 3
Результатів на сторінці
Налаштування сортування
Документ Nanoscale Co/C multilayer for "carbon window" Schwarzschild objective(STC "Institute for Single Crystals", 2007) Bugayev, Ye. A.; Devizenko, O. Y.; Zubarev, Evgeniy N.; Kondratenko, V. V.Документ Soft X-ray imaging of thick carbon-based materials using the normal incidence multilayer optics(Elsevier Ltd, 2010) Artyukov, I. A.; Feschenko, R. M.; Vinogradov, A. V.; Bugayev, Ye. A.; Devizenko, O. Y.; Kondratenko, V. V.; Kasyanov, Yu. S.; Hatano, T.; Yamamoto, M.; Saveliev, S. V.The high transparency of carbon-containing materials in the spectral region of “carbon window” (∼4.5–5 nm) introduces new opportunities for various soft X-ray microscopy applications. The development of efficient multilayer coated X-ray optics operating at the wavelengths of about 4.5nm has stimulated a series of our imaging experiments to study thick biological and synthetic objects. Our experimental set-up consisted of a laser plasma X-ray source generated with the 2nd harmonics of Nd–glass laser, scandium-based thin-film filters, Co/C multilayer mirror and X-ray film UF-4. All soft X-ray images were produced with a single nanosecond exposure and demonstrated appropriate absorption contrast and detector-limited spatial resolution. A special attention was paid to the 3D imaging of thick low-density foam materials to be used in design of laser fusion targetsДокумент Structural transformation in C/Si multilayer after annealing(Научный центр физических технологий МОН Украины; НАН Украины, 2012) Zhuravel, I. O.; Bugayev, Ye. A.; Konotopsky, L. E.; Zubarev, E. M.; Sevryukova, V. A.; Kondratenko, V. V.Amorphous C/Si multilayers were prepared by DC magnetron sputtering technique and investigated by transmission electron microscopy and low-angle x-ray diffraction methods after annealing at 650 and 950 °C. The amorphous interlayers of 0.5 − 0.6 nm thick were found at C/Si and Si/C interfaces being of different density and composition. Amorphous structure of the multilayer is stable up to 950 °C when crystallization of α-SiC occurs and voids form in α-Si layer.