Определение толщины активной области Si-PIN детектора по зависимости интенсивности аналитических линий однокомпонентных эталонов от длины волны

Abstract

The simple procedure of the detector active zone thickness determination is proposed, in which the fluxes of fluorescent radiation analytical lines from single-component samples excited by monochromatic radiation of a secondary radiator are used as the known fluxes. The superposition of experimental and calculated curves of the analytical line intensity versus the wavelength allows determination of the active zone thickness d = 170 мm with an accuracy of 10 мm.