Влияние электромагнитного излучения на работоспособность полупроводниковых приборов

Abstract

Existing physical models of mechanisms of influence of external electromagnetic radiation on the efficiency of semiconductor devices in the field of irreversible failures are investigated. It is shown that the effect of pulsed electromagnetic radiation on electric products is often accompanied by the emergence of currents in the leading elements of products and the formation of their internal fields. A mechanism for the appearance of surface electronic states on uneven boundaries of conducting solid media is proposed. The mechanisms of occurrence of instability of eigen oscillations of semiconductor superstructures, determined by their interaction with the flows of charged particles under conditions of external electromagnetic radiation, are determined. The influence of inhomogeneous surface properties in radiating structures on the spectral characteristics of the transition and Cherenkov radiation is investigated.