Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
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Дата
2017
ORCID
DOI
doi.org/10.15407/fm24.04.555
Науковий ступінь
Рівень дисертації
Шифр та назва спеціальності
Рада захисту
Установа захисту
Науковий керівник
Члени комітету
Видавець
Institute for Single Crystals
Анотація
Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data.
Опис
Ключові слова
Бібліографічний опис
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S. I. Menshikova [et al.] // Functional Materials. – 2017. – Vol. 24, No 4. – P. 555-558.