Charge carrier mobility in semiconductor solid solutions and percolation phenomena
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Дата
2017
ORCID
DOI
doi.org/10.1088/1742-6596/864/1/012027
Науковий ступінь
Рівень дисертації
Шифр та назва спеціальності
Рада захисту
Установа захисту
Науковий керівник
Члени комітету
Видавець
Анотація
The existence of a range of an anomalous growth in charge carrier mobility under the transition to heavy doping is established for Bi₂Te₃–Sb₂Te₃ solid solutions. This confirms our suggestion about the universal character of critical phenomena accompanying the transition from impurity discontinuum to impurity continuum. The experimental results are analyzed in terms of percolation theory taking into account alloy scattering and spatial correlations of impurity centers.
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Бібліографічний опис
Rogacheva E. Charge carrier mobility in semiconductor solid solutions and percolation phenomena [Electronic resource] / E. Rogacheva, O. Nashchekina, E. Martynova // IOP Conference Series: Journal of Physics. – 2017. – Vol. 864. – Proceedings of the 33rd International Conference on the Physics of Semiconductors, 31 July-5 August 2016. – Electronic text data. – Beijing, 2016. – P. 012027. – URL: https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012027/pdf, free (accessed 06.04.2021).