Please use this identifier to cite or link to this item: http://repository.kpi.kharkov.ua/handle/KhPI-Press/51982
Title: Enhancement In Charge Carrier Mobility Under Transition To Heavy Doping
Authors: Rogacheva, E. I.
Nashchekina, Olga N.
Vodorez, O. S.
Keywords: heavily doped semiconductors; impurity concentration; carrier mobility; critical phenomena; percolation theory
Issue Date: 2010
Citation: Rogacheva E. I. Enhancement In Charge Carrier Mobility Under Transition To Heavy Doping [Electronic resource] / E. I. Rogacheva, O. N. Nashchekina, O. S. Vodorez // AIP Conference Proceedings. – 2010. – Vol. 1199, iss. 1. – 29th International Conference on the Physics of Semiconductors (ICPS), 27 July-1 August 2008. – Electronic text data. – Rio de Janeiro, 2008. – P. 83-84. – URL: https://aip.scitation.org/doi/pdf/10.1063/1.3295565, free (accessed 06.04.2021).
Abstract: New experimental data confirming our suggestion about the universal character of critical phenomena accompanying the transition from "an impurity gas" to "an impurity condensate" with impurity concentration increasing are presented. The existence of the range of anomalous growth in the charge carrier mobility under transition to heavy doping is established for PbTe–PbSe solid solutions. The experimental results are analyzed on the basis of percolation theory taking into account alloy scattering and spatial correlations of impurity centers.
DOI: doi.org/10.1063/1.3295565
URI: http://repository.kpi.kharkov.ua/handle/KhPI-Press/51982
Appears in Collections:Кафедра "Менеджмент та оподаткування"
Кафедра "Фізика"

Files in This Item:
File Description SizeFormat 
AIPCP_2010_1199_1_Rogacheva_Enhancement.pdf145,33 kBAdobe PDFThumbnail
View/Open
Show full item record  Google Scholar



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.