Please use this identifier to cite or link to this item: http://repository.kpi.kharkov.ua/handle/KhPI-Press/52002
Title: Heat capacity and microhardness of the topological crystalline insulator Pb₁₋ₓSnₓTe near the band inversion composition
Authors: Rogacheva, E. I.
Nashchekina, Olga N.
Nikolaenko, A.
Menshov, Yu.
Issue Date: 2017
Citation: Heat capacity and microhardness of the topological crystalline insulator Pb₁₋ₓSnₓTe near the band inversion composition [Electronic resource] / E. Rogacheva [et al.] // IOP Conference Series: Journal of Physics. – 2017. – Vol. 864. – Proceedings of the 33rd International Conference on the Physics of Semiconductors, 31 July-5 August 2016. – Electronic text data. – Beijing, 2016. – P. 012042. – URL: https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012042/pdf, free (accessed 07.04.2021).
Abstract: The goal of the present work is to reveal effects accompanying the band inversion in Pb₁₋ₓSnₓTe solid solutions by measuring heat capacity and microhardness. The objects of the study are Pb₁₋ₓSnₓTe alloys with Sn concentrations in the range of x = (0.59 – 0.68), near the composition corresponding to the transition to a gapless state close to room temperature. It was established that in the Pb₁₋ₓSnₓTe solid solutions, the transition to the bulk gapless state with the band inversion is manifested through the appearance of peaks in the dependences of specific heat and microhardness on composition at a fixed temperature.
DOI: doi.org/10.1088/1742-6596/864/1/012042
URI: http://repository.kpi.kharkov.ua/handle/KhPI-Press/52002
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