Flexible thermoelectric module based on zinc oxide thin film grown via SILAR
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Дата
2021
DOI
doi.org/10.1016/j.cap.2020.10.012
Науковий ступінь
Рівень дисертації
Шифр та назва спеціальності
Рада захисту
Установа захисту
Науковий керівник
Члени комітету
Видавець
Анотація
In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on
flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 ◦C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient 147 μV/K and thermoelectric power factor at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m2 at ΔT = 50 K.
Опис
Ключові слова
zinc oxide, crystal structure, thermoelectric module, chemical reactions, flexible polyimide
Бібліографічний опис
Flexible thermoelectric module based on zinc oxide thin film grown via SILAR [Electronic resource] / N. P. Klochko [et al.] // Current Applied Physics. – Electronic text data. – 2021. – No. 21. – P. 121-123. – Access mode: https://www.sciencedirect.com/science/article/abs/pii/S1567173920302443, free (date of the application 01.10.2022.).