The structure of Mo/Si multilayers prepared in the conditions of ionic assistance

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dc.contributor.authorZubarev, Evgeniy N.en
dc.contributor.authorKondratenko, V. V.en
dc.contributor.authorSevryukova, V. A.en
dc.contributor.authorYulin, S. A.en
dc.contributor.authorFeigl, T.en
dc.contributor.authorKaiser, N.en
dc.date.accessioned2022-06-28T13:23:19Z
dc.date.available2022-06-28T13:23:19Z
dc.date.issued2008
dc.description.abstractThe influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to −200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over −200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.en
dc.identifier.citationThe structure of Mo/Si multilayers prepared in the conditions of ionic assistance / E. N. Zubarev [et al.] // Applied Physics A. – 2008. – Vol. 90, iss. 4. – P. 705–710.en
dc.identifier.doidoi.org/10.1007/s00339-007-4337-6
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/57519
dc.language.isoen
dc.publisherSpringeren
dc.subjectthe structure of Mo/Si multilayersen
dc.subjectcross-sectional electron microscopyen
dc.subjectsmall-angle X-ray reflectivityen
dc.subjectX-ray diffractionen
dc.subjectструктура періодичних багатошарових Mo/Si композиційuk
dc.subjectелектронна мікроскопія поперечного перерізуuk
dc.subjectмалокутова відбивна здатність рентгенівських променівuk
dc.subjectдифракція рентгенівських променівuk
dc.titleThe structure of Mo/Si multilayers prepared in the conditions of ionic assistanceen
dc.typeArticleen

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