Dependences of thermoelectric properties on the thickness of thin films of indium doped lead telluride
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Дата
2014
ORCID
DOI
Науковий ступінь
Рівень дисертації
Шифр та назва спеціальності
Рада захисту
Установа захисту
Науковий керівник
Члени комітету
Видавець
Institute of Thermoelectricity
Academy of Sciences and Ministry of Education and Science of Ukraine
Academy of Sciences and Ministry of Education and Science of Ukraine
Анотація
Dependences of thermoelectric properties (the Seebeck coefficient S, the electric conductivity σ, the Hall coefficient RH, the carrier mobilityμ and the thermoelectric power P = S²·σ) on the thickness d (d = 10 – 255 nm) of thin films prepared by vacuum evaporation of indiumdoped PbTe crystals and subsequent condensation on (111) BaF₂ substrates were obtained. With decreasing thickness of films to d ≈ 40 nm, there is n- to p-type inversion of conduction which is related to a change in thermodynamic equilibrium conditions and partial reevaporation of lead and/or indium atoms. Extremes were found on the thickness dependences of properties at d₁ ≈ 20 nm which is indicative of hole gas quantization. In the range of thicknesses with n-type conduction there is a smooth change in thermoelectric properties with thickness which testifies to manifestation of classical size effect and is sufficiently well described in the framework of the Fuchs-Sondheimer theory.
Опис
Ключові слова
lead telluride, thin film, thickness, size effect
Бібліографічний опис
Dependences of thermoelectric properties on the thickness of thin films of indium doped lead telluride / S. I. Menshikova [et al.] // Journal of Thermoelectricity. – 2014. – No 6. – P. 52-61.