Кафедра "Мікро- та наноелектроніка"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/2787

Офіційний сайт кафедри http://web.kpi.kharkov.ua/mne

Від 2022 року (НАКАЗ 31 ОД від 21.01.2022 року) кафедра має назву "Мікро- та наноелектроніка", первісна назва – "Фізичне матеріалознавство для електроніки та геліоенергетики". З 1.09.2024 р. (НАКАЗ 303 ОД від 28.08.2024 року ) кафедра "Радіоелектроніка" приєднана до кафедри "Мікро- та наноелектроніка"

Кафедра "Фізичне матеріалознавство для електроніки та геліоенергетики" була заснована у 1988 році з ініціативи Заслуженого діяча науки та техніки України, доктора фізико-математичних наук, профессора Бойка Бориса Тимофійовича.

За час існування кафедри в галузі електроніки на основі тонкоплівкових моделей були розроблені: нові технологічні методи виготовлення надійних конденсаторів на основі танталу та ніобію, елемент захисту електронних схем від імпульсних перепадів напруги, що не має світових аналогів, резистивний газовий датчик адсорбційно-напівпровідникового типу для аналізу навколишнього середовища тощо.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут".

У складі науково-педагогічного колективу кафедри працюють: 1 доктор технічних наук, 4 кандидата технічних наук, 2 кандидата фізико-математичних наук; 3 співробітника мають звання доцента, 2 – старшого наукового співробітника, 1 – старшого дослідника.

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Зараз показуємо 1 - 20 з 193

Adopting of DC Magnetron Sputtering Method For Preparing Semiconductor Films
(Institute of Electrical and Electronics Engineers, 2017) Kirichenko, M. V.; Zaitsev, R. V.; Dobrozhan, A. I.; Khrypunov, G. S.; Kharchenko, M. M.
It has been carried out the experimental studies of the process of cadmium telluride magnetron sputtering with direct current, and the impact of a magnetron sputtering mode on CdTe films crystalline structure. In order to create thin-film solar cells based on cadmium sulfide and telluride CdTe films for the base layers of thin film solar cells was obtained on flexible polyimide substrates by magnetron sputtering with direct current for the first time. It has found that increasing the magnetron discharge current up to 80 mA leads to increase in coherent scattering regions what is due to an increase in the thickness of the cadmium telluride films of the hexagonal modification having a columnar structure.
Amplitude-time characteristics of switching in thin films of cadmium telluride
(Сумський державний університет, 2018) Khrypunov, M. G.; Zaitsev, R. V.; Kudii, D. A.; Khrypunova, A. L.
The amplitudetime characteristics of switching in thin films of cadmium telluride were investigated when single impulses of 1 μs duration are applied. It has been experimentally established that with an increase in the thickness of the cadmium telluride layer from 3 μm to 8 μm, an increase in the operating threshold from 70 V to 105 V is observed. The maximum residual sample voltage varies from 12 V to 40 V, the minimum – from 5 V to 20 V. The switching time of the samples was no more than 2 nanoseconds; the interelectrode capacity of the samples was no more than 2 pF. All the test samples were operated without failure 20 times. The structural studies of cadmium telluride films by the method of X-ray diffractometry and scanning electron microscopy have made it possible to propose a mechanism for realizing the monostable switching of the columnar structure of cadmium telluride films oriented in the form of melted high-conductivity channels in grains oriented in the direction.
Attestation of solar cells by back EMF method
(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Lobatenko, D. D.; Kirichenko, M. V.; Zaitsev, R. V.; Kopach, V. R.
Automation of Quasi-Closed Space Method Based on ARM Microcontroller
(Institute of Electrical and Electronics Engineers, 2016) Zaitsev, R. V.; Kirichenko, M. V.; Prokopenko, D. S.; Zaitseva, L. V.
Back surface reflector optimization for thin single crystalline silicon solar cells
(Scientific and Technological Corporation "Institute for Single Crystals", 2007) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.; Tymchuk, I. T.; Antonova, V. A.; Listratenko, A. M.
It has been shown that for single crystalline silicon solar cells (Si-SC) with 180-200 μm thick base crystals, the optimum back surface reflector (BSR) is TiO₂/Al with 0.18 μm thick oxide layer. At such BSR, the reflection coefficient for photoelectric active sunlight reaching the back surface of Si-SC at 0.88-1.11 μm wavelengths attains 81 to 92 % against of 71 to 87 % at direct Al contact with back surface of silicon base crystal.
Cadmium sulfide thin films for flexible solar cell received by magnetron dispersion method
(Національний технічний університет "Харківський політехнічний інститут", 2018) Zaitsev, Roman Valentinovich; Kirichenko, Michailo Valerievich; Khrypunov, Gennadiy Semenovich
For the purpose of creation of the economic, suitable for large-scale application technology of formation of a layer of wide-scale "window", for thin-film photo-electric converters on the basis of sulfide and telluride of cadmium the pilot studies of temperature effect of a deposition of the films of sulfide of cadmium received by method of magnetron dispersion on a direct current on their optical properties and crystalline structure were conducted. By method of a two-channel optical spectroscopy it is established that a deposition of films of sulfide of cadmium at a temperature of 160 °C allows to form layers with a width of forbidden region of 1,41 eV that approaches value, characteristic of monocrystals, a nd the density of the photon flux passing through a cadmium sulfide layer in a spectral interval of a photosensitivity of telluride of cadmium at the level of 37,0 W·nm·cm2. Body height of precipitation temperature to 160 °C leads to decrease in optical losses in cadmium sulfide films, as a result of increase in the sizes of areas of a coherent scattering and decrease of level of macrodeformations. At further increase of precipitation temperature up to 230 °C the defining factor leading to growth of optical losses in cadmium sulfide films becomes their imp overishment by an easily volatile component – sulfur.
Capacitive transducers based ITO/polyimide/Al2O3 thin film structure
(Національний технічний університет "Харківський політехнічний інститут", 2020) Zaitseva, Liliia; Vodoriz, Olga; Zaitsev, Roman
It has been developed and approbated prototypes of thin-film capacitor transducers based on Al/ITO/polyimide/Al2O3 heterosystem for capacitive acoustic control in metal objects in the modes of simultaneous acoustic signal reception and generation by capacitive transducers and in certain modes of acoustic signal generating or receiving that can realize objects monitoring with sensitivity at the level of piezoelectric transducers. The developed prototype of thin film capacitive transducer for monitoring pipelines by longwave capacitive method allows increasing the maximum distance between the capacitive transducers up to 10 meters. At a substrate temperature of 300 oC and a specific power of the magnetron of 0.31 W/cm2 on Upilex polyimide films were obtained layers of capacitive transducers with a thickness of 0.2-concentration of charge carriers was 8,3·1020 cm-3 and mobility - 44 cm2/(V·s). It has been engineered the thin film capacitive transducers which by using the polyamide film with 15 microns thickness of and alumina film with 1 micron thickness allow to increase the sensitivity of such method in 7-8 times, and the additional use of thin crystalline Al2O3 films deposited on a substrate of polyimide, allows to increase the value of the dielectric constant of the layer of the capacitive transduser from 3-4 relative units to 8.5-11.5 relative units. Experimental studies of the crystal structure of the developed transducers by X - ray diffractometry and research of their dielectric properties were carried out. The device was tested and the possibility of its use was shown along with the generally accepted methods of defectoscopy. It is shown that using the magnetron sputtering technology, which provides high adhesion to polyimide substrate layers, made possible produce the capacitive transducers for objects with various shape. Proposed and patented: capacitor method for receiving acoustic signals in non-destructive control and transducer of ultrasonic acoustic wave’s excitation and receiving.
Conception of Flexible Thin-Film Solar Battery for Autonomous Hybrid Thermophotoenergy Unit
(Institute of Electrical and Electronics Engineers, 2016) Kirichenko, M. V.; Zaitsev, R. V.; Lobotenko, D. S.; Zaitseva, L. V.
Constructive solution of highly effective photoenergy module: development and experimental testing
(Национальный технический университет "Харьковский политехнический институт", 2019) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Zaitseva, L. V.; Chugai, O. N.; Drozdova, A. A.
Based on experimental study and computermodeling of working temperature influence on the efficiency of Chinese production silicon solar cells identified temperature dependence of efficiency shows the feasibility of using Chinese production Si-SC in the construction of photovoltaic thermal system, which together with the heat pump is part of a combined system for hot water supply, heating and air conditioning. Based on a detailed analysis of the working temperature influence on the efficiency of photovoltaic processes that determine the solar cells work, it has been developed the optimal construction and technological solution of hybrid solar generated module, the main feature ofwhich is the heat exchange block, designed to reduce the solar cells working temperature. The experimental testing of hybrid modules samples equipped with developed cooling system, high-voltage part of power take-off system demonstrates their reliability and high efficiency which allow to achieve the such module efficiency up to 18.5 %.
Crystal Structure of Nanoscale Tin Dioxide Films Produced by Magnetron Sputtering
(Kyiv polytechnic institute, 2014) Sokol, Yevgen I. ; Pirohov, O. V.; Klochko, N. P.; Novikov, V. A.; Khrypunov, G. S.; Klepikova, K. S.
Investigation of direct current magnetron sputtering parameters effects on the crystal structure of gas sensitive tin dioxide films has revealed that the change in the substrate temperature and in the film thickness leads to the transition from the condensation of metastable conglomerates of amorphous globules to the ≈15 nm SnO₂ crystallites with three-dimensional shape and well-defined edges. The dependence of the SnO₂ structure from the working Ar-O₂ gas mixtures and from their humidity evidences the significant role of the adsorption in the kinetics of the magnetron sputtering of tin dioxide. Due to the adsorption the morphological and dimensional characteristics of the tin dioxide films demonstrate the anomalous stability of the amorphous globules with their enhanced specific surface energy and the stabilization of the amorphous state, selectively retained even after the SnO₂ film reach in general the critical thickness of the crystallization.
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
(Scientific and Technological Corporation "Institute for Single Crystals", 2011) Zaitsev, R. V.; Kirichenko, M. V.; Doroshenko, A. N.; Khrypunov, G. S.
Using the computer simulation method it was studied the dependences of nonequili-brium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the diode structures based on p-type conductivity boron doped silicon crystals with 10 Ohm-cm resistivity, grown by the Czochralski method. A number of obtained results well correlated with the experimental data related to the effects of photon degradation in solar cells which based on considered type silicon crystals (Si-SC) and influence of a stationary magnetic field on such devices efficiency. Overall, our results provide additional possibility for the evolution features prediction of electronic, and consequently, functional parameters, not only for Si-SC, but also for other devices based on such diode structures. It will allow looking for the most efficient and cost effective ways to optimize their design-technological solutions, and also estimates their reliability and durability level.
Design of silicon solar cells with horizontal aligned p-n junctions for high voltage operation
(National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic Institute", 2014) Semenenko, M. O.; Klyui, N. I.; Ganus, V. O.; Kirichenko, M. V.; Zaitsev, R. V.; Kharchenko, M. M.
Development and approbation the automatization complex current-voltage characteristics measurement
(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Prokopenko, D. S.; Zaitsev, R. V.; Kirichenko, M. V.
Development and new application of single-crystal silicon solar cells
(2011) Khrypunov, G. S.; Kopach, V. R.; Kirichenko, M. V.; Zaitsev, R. V.
Development of Kesterite Based Heterojunction for Photovoltaics Application
(Institute of Electrical and Electronics Engineers, 2016) Lukianova, O. V.; Klochko, N. P.; Kopach, V. R.; Lyubov, V. M.
Double-layer ITO/Al back surface reflector for single-junction silicon photoconverters
(Scientific and Technological Corporation "Institute for Single Crystals", 2008) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.
It has been shown that to increase the efficiency and manufacturability of single-crystal silicon photovoltaic solar energy converters (Si-PVC) with 180-200 μm thick base crystals having a polished photoreceiving surface and double-layer back surface reflector (BSR) consisting of a transparent oxide and aluminum layers, a conductive transparent indium-tin oxide (ITO) layer of 0.25 μm interference thickness is to be used as the nonmetallic BSR layer. It provides the ITO/Al BSR reflection coefficient in the range of 85 < R < 96 % for solar radiation photoactive component incident the Si-PVC back surface at substantially zero contribution of ITO layer resistance to the device series resistance. In the case of Si-PVC with inverted pyramid type texture of crystal photoreceiving surface at which the specificity of light distribution in the crystal causes total reflection of radiation from Si/ITO interface, the ITO layer thickness should be experimentally optimized in the 1-2 μm range independently of base crystal thickness to minimize the photoactive radiation losses and ITO layer resistance.
Effect of extraterrestrial solar UV radiation on structure and properties of ZnO films obtained by wet chemical methods
(Vasyl Stefanyk Precarpatian National University, 2019) Klochko, N. P.; Khrypunova, I. V.; Klepikova, K. S.; Petrushenko, S. I.; Kopach, V. R.; Zhadan, D. O.; Khrypunova, A. L.; Dukarov, S. V.; Lyubov, V. M.; Kirichenko, M. V.
Effect of Glow-discharge Hydrogen Plasma Treatment on Zinc Oxide Layers Prepared through Pulsed Electrochemical Deposition and via SILAR Method
(Sumy State University, 2019) Klochko, N. P.; Klepikova, K. S.; Petrushenko, S. I.; Nikitin, A. V.; Kopach, V. R.; Khrypunova, I. V.; Zhadan, D. O.; Dukarov, S. V.; Lyubov, V. M.; Khrypunova, A. L.
In this work, we investigated the effect of glow-discharge H₂⁺ plasma treatment on ZnO layers deposited on fluorine doped tin oxide (FTO) glass substrates through low temperature aqueous solution growth, namely, via a pulsed electrochemical deposition and by successive ionic layer adsorption and reaction (SILAR) technique. It is shown that the crystal structure, surface morphology, chemical composition and optical properties obtain some destructive changes after plasma processing due to the creation of oxygen vacancies Vo and H-related defects, and additionally, because of the zinc oxide etching by the glow-discharge H₂⁺ plasma through reduction of zinc oxide and evaporation of Zn from the surface. Neverthe-less, our investigations show quite good stability of the ZnO layers to the plasma-induced radiation and chemical impacts under high total H₂⁺ fluence received by every ZnO/FTO sample ~ 8·10¹⁸ cm⁻².
Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions
(2016) Semenenko, M. O.; Dusheiko, M. G.; Mamykin, S. V.; Ganus, V. O.; Kirichenko, M. V.; Zaitsev, R. V.; Kharchenko, M. M.; Klyui, N. I.
Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversionmainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.
Electronic Parameters of a New Thin Film Composition for Kesterite Solar Cell
(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Lukianova, O. V.; Lyubov, V. M.; Kirichenko, M. V.