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Документ Electromagnetic compatibility of semiconductor devices exposed to transitionradiation(Національний технічний університет "Харківський політехнічний інститут", 2019) Knyazev, Volodymyr; Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, IgorThe subject of the paper is an analysis and a physical model of the occurrence of reversible failures in semiconductor diodes (when current-voltage characteristics of the devices are influenced by electromagnetic radiation (EMR)). The model is based on the mechanism with which the energy of currents induced by external EMR is converted into the energy of natural electromagnetic oscillations of solid-state components of radio units (transition radiationeffect).The aim of the paper is to justify experimental studies on the basis of the proposed physical model of reversible failures (occurrence of negative resistance sections in current-voltage curve of semiconductor diodes). We determined external electromagnetic radiation and semiconductor device parameter ranges with which this physical modelcan be applied. We conductedsome experiments to study the influence of pulsed electromagnetic radiation on the current-voltage characteristics of direct current diode sections. The experiments justified the presence of areas with negative differential resistance characteristic for the natural oscillation generation mode (an increase in forward current when the voltage drops).Our objectives are to perform experimental study of interactions betweenthe currents induced by external EMR and electrostatic oscillations of a semiconductor structure. Such interactionsresults from conversion of energy of moving charges (induced currents) into energy of electromagnetic oscillations under conditions of transition radiation when the particle flux goes along the normal to asemiconductor structure boundary. The methodsused areanalytical methods, i.e.solving Maxwell's equations and medium equations in the framework of the hydrodynamic approach. The followingresults wereobtained. Experimental studies of behavior of semiconductor components of electrical radio units exposed to strong pulsed electromagnetic fields have been carried out. The nature of changes in the performance of semiconductor components has been studied. It has been shown that the impactof pulsed electromagnetic radiation is accompanied by currents in the conductive elements of the units. We define here a certain type of reversible failures of semiconductor radio units. Failures of this type occur due to interaction between the external radiation inducedcurrents and own fields of radio equipment components. Such failures occurs in presence of transition radiation (when the current is directed along the normal to the boundary of the unit). Wearguethat suchinteractionslead to energy losses ininduced currents due to excitation of natural oscillations in the units, i.e. the units enters an oscillation generation mode, which is characterized by a change in the current-voltagecharacteristics of radio devices. With the results of comparative analysis of the experimental and calculated data obtained in this work,it is possible to use the proposed physical model of reversible failures and calculated derived relationships to determine criteria of occurrence and quantitative characteristics of reversible failures insemiconductor diodes exposed topulsed electromagnetic radiation (occurrence of S-shaped sections of direct current). Conclusion.The results obtained can be used to assess electromagnetic compatibility of active electronic devices (millimeter/submillimeter amplifiers, generators and transducers of electromagnetic oscillations) exposed toexternal pulsed electromagnetic fields. A comparative analysis of quantitative estimates of reversible failures of semiconductor devices depending on the spatial configuration of the affectingfield (the induced current is normal to the structure boundary) allows us to solve the problem of optimizing the degree of distortion inthe perating characteristics of these devices.Документ Excitation of surface vibrations of semiconductor structures exposedto external electromagnetic radiation(Національний технічний університет "Харківський політехнічний інститут", 2018) Serkov, A.; Breslavets, Vitaliy; Yakovenko, I.; Dziabenko, O.The subject of the study are processes of manifestation of instabilities of natural oscillations of semiconductor structures, which are caused by the mechanisms of interaction of charged particle flows in the presence of powerful external electromagnetic radiation. The goalis to obtain design relationships that allow determining the degree of deviation of the performance characteristics of semiconductor components from the norm, depending on the parameters of the external pulsed electromagnetic field. The taskis to construct a model of interaction induced by external electromagnetic radiation currents with electrostatic oscillations of the semiconductor structure. The modelis based on the realization of the resonance (Cherenkov) interaction of moving charges and electromagnetic oscillations under conditions where the phase velocity of the wave and the velocity of the charged particle are the same. The methodsused: analytical methods for solving the Maxwell equations and the equations of the medium in the framework of the hydrodynamic approach. The following results are obtained. Investigations of the functioning of semiconductor components of electronic equipment under the influence of strong-pulsed electromagnetic fields are carried out. The nature of changes in the working capacity of semiconductor components of the hardware component base is determined. It is shown that the influence of pulsed electromagnetic radiation is accompanied by the appearance of currents in the conductive elements of products and the appearance of intrinsic internal fields. One of the types of reversible failures of the semiconductor element base of electronic products is determined, based on the interaction of currents induced by external radiation with the intrinsic fields of the structures that complete the product. Similar failures are realized under conditions of Cherenkov radiation, when the current is parallel to the boundary of the structure. It is shown that this interaction leads to energy losses of the induced currents to excitation of the natural vibrations of the structure, i.e. the appearance of a mode of oscillation generation, which is characterized by a change in the volt-ampere characteristics of radio products. The comparative analysis of quantitative evaluations of reversible failures of semiconductor devices depending on the spatial configuration of the acting field, in which the induced current is paralleled to the structure boundary, allows solving problems of optimizing the degree of distortion of the performance characteristics of these devices. The results obtained in the work canbe used to evaluate the efficiency of active radioelectronic devices, for example, amplifiers, generators and converters of electromagnetic oscillations in the millimeter and submillimeter ranges under the influence of powerful external pulsed electromagnetic fields.Документ Extraneous electromagnetic radiation impact on waveguide characteristics of a semiconductor superlattice(НТУ "ХПІ", 2018) Kravchenko, Volodymyr; Breslavets, Vitaliy; Yakovenko, Igor; Hui, Qiu JingThe subject matter is the mechanisms of emergence of instabilities in natural oscillations of semiconductor supertattices caused by their interaction with charged particle flows of extraneous electromagnetic radiation. The aimis calculating ratios to determine a degree of deviation of operating characteristics of semiconductor components from the norm, depending on the parameters of extraneous pulsed electromagnetic radiation. The objectiveis to model how currents that are induced with extraneous EMR interact with electrostatic oscillations of a semiconductor supertattice, using an implementation of (Cherenkov) resonance interaction of moving charges with electromagnetic oscillations under conditions where the phase velocity of the wave and the velocity of the charged particle are the same. The methods used: analytical methods for solving Maxwell's equations and medium equations in a framework of hydrodynamic approach. The following results are obtained. We have studied semiconductor components of electronic equipment (supertattices) being exposed to strong pulsed electromagnetic fields. The study was focused on the nature of changes in the working capacity of the components. We show that the effect of pulsed electromagnetic radiation is accompanied by an emergence of currents in the conductive hardware elements and an emergence of internal fields within them. One kind of reversible failures of semiconductor hardware elements is determined, based on interaction of extraneous radiation induced currents with the intrinsic fields of the supertattices of the hardware components. Similar failures occur under conditions of Cerenkov radiation (when the current is parallel to the structure boundary). It is shown that such interaction leads to energy losses in the induced currents spent to excitation of natural oscillations of the supertattice, i.e. to emergence of an oscillation generation mode that is characterized with a change in the volt-ampere characteristics of the hardware. The results obtained in this work can be used to evaluate the efficiency of active radio electronic devices (amplifiers, generators and converters of electromagnetic oscillations in the millimeter and sub-millimeter ranges) being exposed to extraneous pulsed electromagnetic fields. The comparative analysis of quantitative evaluations of reversible failures of semiconductor devices in dependence on the spatial configuration of the acting field (induced current parallel to the structure boundary) allows solving problems in optimizing the degree of distortion of the performance characteristics of these devices.