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Документ Excitation of surface vibrations of semiconductor structures exposedto external electromagnetic radiation(Національний технічний університет "Харківський політехнічний інститут", 2018) Serkov, A.; Breslavets, Vitaliy; Yakovenko, I.; Dziabenko, O.The subject of the study are processes of manifestation of instabilities of natural oscillations of semiconductor structures, which are caused by the mechanisms of interaction of charged particle flows in the presence of powerful external electromagnetic radiation. The goalis to obtain design relationships that allow determining the degree of deviation of the performance characteristics of semiconductor components from the norm, depending on the parameters of the external pulsed electromagnetic field. The taskis to construct a model of interaction induced by external electromagnetic radiation currents with electrostatic oscillations of the semiconductor structure. The modelis based on the realization of the resonance (Cherenkov) interaction of moving charges and electromagnetic oscillations under conditions where the phase velocity of the wave and the velocity of the charged particle are the same. The methodsused: analytical methods for solving the Maxwell equations and the equations of the medium in the framework of the hydrodynamic approach. The following results are obtained. Investigations of the functioning of semiconductor components of electronic equipment under the influence of strong-pulsed electromagnetic fields are carried out. The nature of changes in the working capacity of semiconductor components of the hardware component base is determined. It is shown that the influence of pulsed electromagnetic radiation is accompanied by the appearance of currents in the conductive elements of products and the appearance of intrinsic internal fields. One of the types of reversible failures of the semiconductor element base of electronic products is determined, based on the interaction of currents induced by external radiation with the intrinsic fields of the structures that complete the product. Similar failures are realized under conditions of Cherenkov radiation, when the current is parallel to the boundary of the structure. It is shown that this interaction leads to energy losses of the induced currents to excitation of the natural vibrations of the structure, i.e. the appearance of a mode of oscillation generation, which is characterized by a change in the volt-ampere characteristics of radio products. The comparative analysis of quantitative evaluations of reversible failures of semiconductor devices depending on the spatial configuration of the acting field, in which the induced current is paralleled to the structure boundary, allows solving problems of optimizing the degree of distortion of the performance characteristics of these devices. The results obtained in the work canbe used to evaluate the efficiency of active radioelectronic devices, for example, amplifiers, generators and converters of electromagnetic oscillations in the millimeter and submillimeter ranges under the influence of powerful external pulsed electromagnetic fields.Документ Extraneous electromagnetic radiation impact on waveguide characteristics of a semiconductor superlattice(НТУ "ХПІ", 2018) Kravchenko, Volodymyr; Breslavets, Vitaliy; Yakovenko, Igor; Hui, Qiu JingThe subject matter is the mechanisms of emergence of instabilities in natural oscillations of semiconductor supertattices caused by their interaction with charged particle flows of extraneous electromagnetic radiation. The aimis calculating ratios to determine a degree of deviation of operating characteristics of semiconductor components from the norm, depending on the parameters of extraneous pulsed electromagnetic radiation. The objectiveis to model how currents that are induced with extraneous EMR interact with electrostatic oscillations of a semiconductor supertattice, using an implementation of (Cherenkov) resonance interaction of moving charges with electromagnetic oscillations under conditions where the phase velocity of the wave and the velocity of the charged particle are the same. The methods used: analytical methods for solving Maxwell's equations and medium equations in a framework of hydrodynamic approach. The following results are obtained. We have studied semiconductor components of electronic equipment (supertattices) being exposed to strong pulsed electromagnetic fields. The study was focused on the nature of changes in the working capacity of the components. We show that the effect of pulsed electromagnetic radiation is accompanied by an emergence of currents in the conductive hardware elements and an emergence of internal fields within them. One kind of reversible failures of semiconductor hardware elements is determined, based on interaction of extraneous radiation induced currents with the intrinsic fields of the supertattices of the hardware components. Similar failures occur under conditions of Cerenkov radiation (when the current is parallel to the structure boundary). It is shown that such interaction leads to energy losses in the induced currents spent to excitation of natural oscillations of the supertattice, i.e. to emergence of an oscillation generation mode that is characterized with a change in the volt-ampere characteristics of the hardware. The results obtained in this work can be used to evaluate the efficiency of active radio electronic devices (amplifiers, generators and converters of electromagnetic oscillations in the millimeter and sub-millimeter ranges) being exposed to extraneous pulsed electromagnetic fields. The comparative analysis of quantitative evaluations of reversible failures of semiconductor devices in dependence on the spatial configuration of the acting field (induced current parallel to the structure boundary) allows solving problems in optimizing the degree of distortion of the performance characteristics of these devices.