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Документ The influence of a potential barrier on the mechanisms of excitation of own fluctuations in radio products in conditions of exposure to electromagnetic radiation(Національний технічний університет "Харківський політехнічний інститут", 2023) Serkov, Aleksandr; Breslavets, Vitalii; Breslavets, Juliya; Yakovenko, IgorThe subject matter is the processes of analysis and the mechanisms of the emergence of their own fluctuations in the semiconductor complex electro -radio devices (communications equipment), if there are currents and voltages entrusted with pulsed electromagnetic radiation, the results obtained in the work of the potential barrier on the border of the semi -conductive structure on the border of the semiconductor (voltage ampere) characteristics of a electroradio device. The aim is model of transforming the energy of the flow of charged particles, induced by external electromagnetic radiation, into the energy of its own fluctuations in the semiconductor structure, taking into account the properties of the structure itself (heterogeneity of potential at the border). The implementation of this model is due to theeffect of transitional radiation of moving charges, when the particle flow crosses the boundary of the media section with various electromagnetic properties (dielectric permeability) and part of its energy is transformed into the energy of its own fluctuations in the semiconductor structure. The objectives are: mechanisms of the strengthening (instability) mode of semiconductor components of semiconductor devices under conditions of impulse electromagnetic radiation in the presence of a potential barrier on the boundary of the media of the media. The methods used are the method of theory of small disturbances, which allows you to determine the spectrum of the own vibrations of the system: the current fluctuations of the semiconductor device in electromagnetic radiation. The following results are obtained: The interaction of surface plasmons with the flow was considered charged particles in the presence of a potential barrier based on energy principle. Kinetic equations have been obtained that determine the change in the number superficial plasmons, expressions for the increments of their instability with taking into account the size of a potential barrier on the border, which leads t o the appearance of a beam reflected from the border. The results of the work allow you to take into account the contribution of the reflected and completed component of the energy flow energy into the total energy of the radiation of surface vibrations. The mechanisms of interaction between the flow of charged particles with the own electromagnetic fluctuations of two -dimensional electronic gas, the occurrence of which is due to the presence of a potential barrier on the border of the media section. Conclusion. Determination of the amplification (generation) modes of electro -radio products that distort their volt are ampere characteristics (reversible failures) depending on the parameters of external electromagnetic radiation. An analysis of the routes obtained in the work can be used in the development of radio emergency for working in a millimeter and submilimeter range (amplifiers, generators and frequency converters). Assessment of indicators of the exponential growth of amplitudes of the own fluctuations of semiconductor components (increement of instability as a criterion of reversible failures) show that the magnitude of the energy of radiation lies within the sensitivity of modern receivers of the radiation of the submilimeter range and is the reason for the failure.Документ Excitation of own oscillations in semiconductor components of radio products under the exposure of third-party electromagnetic radiation(Національний технічний університет "Харківський політехнічний інститут", 2022) Serkov, Aleksandr; Breslavets, Vitalii; Breslavets, Juliya; Yakovenko, IgorThe subject matter is the processes of analysis and mechanisms of interaction of EMP-induced currents and voltages with the processes characterizing the functional purpose of radio products, is usually carried out within the framework of the theory of distributed circuits. The presented approach makes it possible to evaluate the performance criteria in general (for example, to evaluate the critical energy characterizing a thermal breakdown), however, issues related to the determination of various types of electromagnetic interactions that occur directly in the components of a product under the influence of EMR remain open. The aim is the possibility of setting up theoretical and experimental studies based on the proposed calculation model for excitation of natural vibrations of a semiconductor structure (exponential growth of amplitude). The parameters of a third-party pulsed electromagnetic field, induced currents and characteristics of semiconductor devices have been established within which the regime of amplification of natural vibrations of a semiconductor structure is observed. The objectives are: mechanisms of interaction of induced currents with surface vibrations of semiconductor components of a radio product under the influence of pulsed electromagnetic radiation. The methods used are: methods of the theory of small perturbations in determining the spectrum of natural oscillations of the system - currents induced by electromagnetic radiation and natural oscillations of the components of the radio product. The following results are obtained: The mechanisms for the appearance of reversible failures of semiconductor components of radio products under the influence of third-party pulsed electromagnetic fields are determined. It has been established that the presence of a current induced by external radiation leads to the establishment of a mode of amplification of natural oscillations of semiconductor components of a radio product (reversible failures). Conclusion. Quantitative estimates of amplification (generation) modes of oscillations of semiconductor devices, distorting their performance depending on the parameters of external electromagnetic influence, allows developing mechanisms for electromagnetic compatibility of microwave radio products. A comparative analysis of the calculated data obtained in the work can be used in the manufacture of radio devices operating in the millimeter and submillimeter range (amplifiers, generators and frequency converters).