Видання НТУ "ХПІ"

The subject matter is the processes of analysis and the mechanisms of the emergence of their own fluctuations in the semiconductor complex electro -radio devices (communications equipment), if there are currents and voltages entrusted with pulsed electromagnetic radiation, the results obtained in the work of the potential barrier on the border of the semi -conductive structure on the border of the semiconductor (voltage ampere) characteristics of a electroradio device. The aim is model of transforming the energy of the flow of charged particles, induced by external electromagnetic radiation, into the energy of its own fluctuations in the semiconductor structure, taking into account the properties of the structure itself (heterogeneity of potential at the border). The implementation of this model is due to theeffect of transitional radiation of moving charges, when the particle flow crosses the boundary of the media section with various electromagnetic properties (dielectric permeability) and part of its energy is transformed into the energy of its own fluctuations in the semiconductor structure. The objectives are: mechanisms of the strengthening (instability) mode of semiconductor components of semiconductor devices under conditions of impulse electromagnetic radiation in the presence of a potential barrier on the boundary of the media of the media. The methods used are the method of theory of small disturbances, which allows you to determine the spectrum of the own vibrations of the system: the current fluctuations of the semiconductor device in electromagnetic radiation. The following results are obtained: The interaction of surface plasmons with the flow was considered charged particles in the presence of a potential barrier based on energy principle. Kinetic equations have been obtained that determine the change in the number superficial plasmons, expressions for the increments of their instability with taking into account the size of a potential barrier on the border, which leads t o the appearance of a beam reflected from the border. The results of the work allow you to take into account the contribution of the reflected and completed component of the energy flow energy into the total energy of the radiation of surface vibrations. The mechanisms of interaction between the flow of charged particles with the own electromagnetic fluctuations of two -dimensional electronic gas, the occurrence of which is due to the presence of a potential barrier on the border of the media section. Conclusion. Determination of the amplification (generation) modes of electro -radio products that distort their volt are ampere characteristics (reversible failures) depending on the parameters of external electromagnetic radiation. An analysis of the routes obtained in the work can be used in the development of radio emergency for working in a millimeter and submilimeter range (amplifiers, generators and frequency converters). Assessment of indicators of the exponential growth of amplitudes of the own fluctuations of semiconductor components (increement of instability as a criterion of reversible failures) show that the magnitude of the energy of radiation lies within the sensitivity of modern receivers of the radiation of the submilimeter range and is the reason for the failure.

Видання НТУ "ХПІ"

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