Zubarev, Evgeniy N.Kondratenko, V. V.Sevryukova, V. A.Yulin, S. A.Feigl, T.Kaiser, N.2022-06-282022-06-282008The structure of Mo/Si multilayers prepared in the conditions of ionic assistance / E. N. Zubarev [et al.] // Applied Physics A. – 2008. – Vol. 90, iss. 4. – P. 705–710.https://repository.kpi.kharkov.ua/handle/KhPI-Press/57519The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to −200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over −200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.enthe structure of Mo/Si multilayerscross-sectional electron microscopysmall-angle X-ray reflectivityX-ray diffractionструктура періодичних багатошарових Mo/Si композиційелектронна мікроскопія поперечного перерізумалокутова відбивна здатність рентгенівських променівдифракція рентгенівських променівArticledoi.org/10.1007/s00339-007-4337-6