Pershyn, Yuriy P.Zubarev, Evgeniy N.Kondratenko, V. V.Sevryukova, V. A.Kurbatova, S. V.2014-03-122014-03-122011Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers / Y. P. Pershyn [et al.] // Applied Physics A. – 2011. – No 103. – P. 1021-1031.https://repository.kpi.kharkov.ua/handle/KhPI-Press/4715Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∼27 nm and barrier layers of CrB20.3- and 0.7-nm thick within the temperature range of 420–780 K were studied by methods of small-angle Xray reflectivity (λ = 0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussedenArticle