Klochko, N. P.Klepikova, K. S.Khrypunova, I. V.Zhadan, D. O.Petrushenko, S. I.Kopach, V. R.Dukarov, S. V.Sukhov, V. M.Kirichenko, M. V.Khrypunova, A. L.2022-10-012022-10-012021Flexible thermoelectric module based on zinc oxide thin film grown via SILAR [Electronic resource] / N. P. Klochko [et al.] // Current Applied Physics. – Electronic text data. – 2021. – No. 21. – P. 121-123. – Access mode: https://www.sciencedirect.com/science/article/abs/pii/S1567173920302443, free (date of the application 01.10.2022.).https://repository.kpi.kharkov.ua/handle/KhPI-Press/58290In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 ◦C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient 147 μV/K and thermoelectric power factor at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m2 at ΔT = 50 K.enzinc oxidecrystal structurethermoelectric modulechemical reactionsflexible polyimideArticledoi.org/10.1016/j.cap.2020.10.012https://orcid.org/0000-0002-4847-506X