Klochko, N. P.Klepikova, K. S.Zhadan, D. O.Petrushenko, S. I.Kopach, V. R.Khrypunov, G. S.Lyubov, V. M.Dukarov, S. V.Nikitin, V. O.Maslak, M. O.Zakovorotniy, A. Yu.Khrypunova, A. L.2020-04-062020-04-062018Structure, optical, electrical and thermoelectric properties of solution-processed Li-doped NiO films grown by SILAR / N. P. Klochko [et al.] // Materials Science in Semiconductor Processing. – 2018. – Vol. 83. – P. 42-49.https://repository.kpi.kharkov.ua/handle/KhPI-Press/45445The article presents a new facial synthesis of Li-doped NiO films (NiO:Li) via an easy and cost-effective method Successive Ionic Layer Adsorption and Reaction (SILAR) with the processing of the obtained NiO films in a lithium-containing aqueous solution for their transformation after annealing into NiO:Li layers. Comparative analysis of crystal structure, optical, electrical and thermoelectric properties of the obtained NiO and NiO:Li 420-1050 nm thick films have reveiled a cubic rock-salt NiO structure, at that, NiO:Li samples are nanocrystalline single phased Li-NiO solid solutions. The fabricated NiO and NiO:Li films are p-type semiconductors with activation energy Ea = 0.1 eV and Ea = 0.25‒0.31 eV, respectively. The obtained in-plane Seebeck coefficients Z are in the range 0.20–0.33 mV/К. Notwithstanding the fact that the maximum values of the thermoelectric power factors P=2.2 μW/K2·m, are rather small, they were achieved if the hot end of the NiO:Li film was heated only to 115 °C. Thus, the produced in this work new low cost thermoelectric thin film material is suitable for a production of electrical energy for low-power devices due to absorption of low-potential heat.enLi-doped NiOSILARthermoelectricresistivitycrystal structureoptical propertyArticledoi.org/10.1016/j.mssp.2018.04.010