Перегляд за Автор "Khrypunov, G. S."
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Документ Adopting of DC Magnetron Sputtering Method For Preparing Semiconductor Films(Institute of Electrical and Electronics Engineers, 2017) Kirichenko, M. V.; Zaitsev, R. V.; Dobrozhan, A. I.; Khrypunov, G. S.; Kharchenko, M. M.It has been carried out the experimental studies of the process of cadmium telluride magnetron sputtering with direct current, and the impact of a magnetron sputtering mode on CdTe films crystalline structure. In order to create thin-film solar cells based on cadmium sulfide and telluride CdTe films for the base layers of thin film solar cells was obtained on flexible polyimide substrates by magnetron sputtering with direct current for the first time. It has found that increasing the magnetron discharge current up to 80 mA leads to increase in coherent scattering regions what is due to an increase in the thickness of the cadmium telluride films of the hexagonal modification having a columnar structure.Документ Advanced capacitive converters based on Al/ITO/Polyimide/Al₂O₃ heterostructures(Vasyl Stefanyk Precarpathian National University, 2015) Zaitseva, L. V.; Khrypunov, G. S.; Zaitsev, R. V.; Momotenko, O. V.Документ Calculation of operating parameters of high-voltage power take-off system for the photovoltaic facility(ТОВ "Друкарня "Мадрид", 2016) Zaitsev, R. V.; Kyrychenko, M. V.; Kholod, A. V.; Zaitseva, L. V.; Prokopenko, D. S.; Khrypunov, G. S.To ensure maximum production of electric power by photovoltaic vacilities, in addition to using highly efficient photovoltaic modules equipped with solar radiation concentrators must use a highly effective power take-off system. This paper is inscribed to solving the problem of a highly efficient and economic power take-off system development. Methodology. To solving the problem, we implemented three stages. On the first stage examines the dependence of electrical power from the intensity of the incident solar radiation. Based on this, the second stage is calculated the DC-DC converter resonant circuit and its working parameters, and developed circuit diagram of DC-DC converter. On the third stage, we carry out an analysis of power take-off system with step up DC-DC converter working. Results. In this paper, we carry out the analysis of working efficiency for photovoltaic facility power take-off system with step-up boost converter. The result of such analysis show that the efficiency of such system in a wide range of photovoltaic energy module illumination power is at 0.92, whereas the efficiency of classic power take-off systems does not exceed 0.70. Achieved results allow designing a circuit scheme of a controlled bridge resonant step-up converter with digital control. Proposed scheme will ensure reliable operation, fast and accurate location point of maximum power and conversion efficiency up to 0.96. Originality. Novelty of proposed power take-off system solution constitute in implementation of circuit with DC-DC converters, which as it shown by results of carrying out modeling is the most effective. Practical value. Practical implementation of proposed power take-off system design will allow reducing losses in connective wires and increasing the efficiency of such a system up to 92.5 % in wide range of photovoltaic energy modules illumination.Документ Constructive solution of highly effective photoenergy module: development and experimental testing(Национальный технический университет "Харьковский политехнический институт", 2019) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Zaitseva, L. V.; Chugai, O. N.; Drozdova, A. A.Based on experimental study and computermodeling of working temperature influence on the efficiency of Chinese production silicon solar cells identified temperature dependence of efficiency shows the feasibility of using Chinese production Si-SC in the construction of photovoltaic thermal system, which together with the heat pump is part of a combined system for hot water supply, heating and air conditioning. Based on a detailed analysis of the working temperature influence on the efficiency of photovoltaic processes that determine the solar cells work, it has been developed the optimal construction and technological solution of hybrid solar generated module, the main feature ofwhich is the heat exchange block, designed to reduce the solar cells working temperature. The experimental testing of hybrid modules samples equipped with developed cooling system, high-voltage part of power take-off system demonstrates their reliability and high efficiency which allow to achieve the such module efficiency up to 18.5 %.Документ Crystal Structure of Nanoscale Tin Dioxide Films Produced by Magnetron Sputtering(Kyiv polytechnic institute, 2014) Sokol, Yevgen I. ; Pirohov, O. V.; Klochko, N. P.; Novikov, V. A.; Khrypunov, G. S.; Klepikova, K. S.Investigation of direct current magnetron sputtering parameters effects on the crystal structure of gas sensitive tin dioxide films has revealed that the change in the substrate temperature and in the film thickness leads to the transition from the condensation of metastable conglomerates of amorphous globules to the ≈15 nm SnO₂ crystallites with three-dimensional shape and well-defined edges. The dependence of the SnO₂ structure from the working Ar-O₂ gas mixtures and from their humidity evidences the significant role of the adsorption in the kinetics of the magnetron sputtering of tin dioxide. Due to the adsorption the morphological and dimensional characteristics of the tin dioxide films demonstrate the anomalous stability of the amorphous globules with their enhanced specific surface energy and the stabilization of the amorphous state, selectively retained even after the SnO₂ film reach in general the critical thickness of the crystallization.Документ Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon(Scientific and Technological Corporation "Institute for Single Crystals", 2011) Zaitsev, R. V.; Kirichenko, M. V.; Doroshenko, A. N.; Khrypunov, G. S.Using the computer simulation method it was studied the dependences of nonequili-brium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the diode structures based on p-type conductivity boron doped silicon crystals with 10 Ohm-cm resistivity, grown by the Czochralski method. A number of obtained results well correlated with the experimental data related to the effects of photon degradation in solar cells which based on considered type silicon crystals (Si-SC) and influence of a stationary magnetic field on such devices efficiency. Overall, our results provide additional possibility for the evolution features prediction of electronic, and consequently, functional parameters, not only for Si-SC, but also for other devices based on such diode structures. It will allow looking for the most efficient and cost effective ways to optimize their design-technological solutions, and also estimates their reliability and durability level.Документ Development and new application of single-crystal silicon solar cells(2011) Khrypunov, G. S.; Kopach, V. R.; Kirichenko, M. V.; Zaitsev, R. V.Документ Electronic Parameters of a New Thin Film Composition for Kesterite Solar Cell(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Lukianova, O. V.; Lyubov, V. M.; Kirichenko, M. V.Документ High-voltage power take-off system for photovoltaic station(Кременчуцький національний університет ім. Михайла Остроградського, 2016) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Prokopenko, D. S.Документ Hybrid solar generating module development for high-efficiency solar energy station(Сумський державний університет, 2018) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Prokopenko, D. S.; Zaitseva, L. V.Experimentally established, the influence of the working temperature and solar radiation power on the efficiency of industrial production silicon solar cells. Based on the experimental results designed the concept of a hybrid solar generating module equipped with a mirror concentrator of solar radiation and solar cells cooling system for using in high-performance solar energy station. Concentrator of solar radiation provides in 1.5-time increase of electrical power generating by such module, and water-cooling system can reduce the equilibrium temperature of the module up to 10 degrees and twice reduce efficiency losses from solar cells overheating. The proposed concept will reduce the number of modules needed to build solar energy station.Документ The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films(Інститут фізики напівпровідників ім. В. Є. Лашкарьова, 2017) Khrypunov, G. S.; Kopach, G. I.; Harchenko, M. M.; Dobrozhan, A. I.To create technology for preparation of CdS and CdTe thin films by direct current magnetron sputtering, the influence of physical and technological condensation modes on the crystal structure and optical properties of these films were investigated. The laboratory method of DC magnetron sputtering with preheating of the target for the mentioned films on glass substrates was developed. We obtained the CdS layers with hexagonal structure 150…200 nm thick under conditions when the plasma discharge current density was 1.1 mA/cm² and the deposition rate – 30…40 nm/min. The bandgap in the obtained CdS films is Eg = 2.38…2.41 eV. After annealing in vacuum, the optical transparence of CdS films reaches 80…90%, which allows to use these films as a transparent window layer in solar cells based on heterojunctions of CdS/CdTe. When the plasma discharge current density is 2.2…5.4 mA/cm² and the deposition rate is 200 nm/min, we obtained CdTe layers with hexagonal structure up to 5 μm thick. The transmittance of CdTe films with hexagonal structure in the wavelength range of the visible spectrum is up to 5%, and in the infrared spectral range is about 60%. The bandgap in the obtained CdTe layers of different thickness is 1.52…1.54 eV. After chloride treatment as a result of the phase transition wurtzite-sphalerite, the investigated CdTe films contain only the stable cubic structure and can be used as a base layer of solar cells.Документ Influence of UV light of extraterrestrial solar irradiance on structure and properties of ZnO films prepared through pulsed electrochemical deposition and via SILAR method(Сумський державний університет, 2018) Klochko, N. P.; Klepikova, K. S.; Petrushenko, S. I.; Kopach, V. R.; Khrypunov, G. S.; Zhadan, D. O.; Dukarov, S. V.; Lyubov, V. M.; Kirichenko, M. V.; Surovitskiy, S. V.; Khrypunova, A. L.The investigations of effect of long-wave (UVA) and short-wave (UVC) ultraviolet light of extraterres-trial solar irradiance on the nanostructured zinc oxide arrays, which were grown by pulsed electrodeposition, as well as on the ZnO and ZnO:In films produced by Successive Ionic Layer Adsorption and Reaction technique (SILAR) confirmed their suitability as UVA-active photosensitive materials. The crystal structure, surface morphology, chemical composition and optical properties found no obvious significant destructive changes after UVC irradiation. However, we detected some irreversible changes in the nature of point defects under the influence of UVC, which affect the ZnO and ZnO:In resistivity, activation energy, photosensitivity and thermoelectrical properties.Документ Mathematical Modeling of Physical Processes of Electromagnetic Field Transformation in Elastic Oscillations Field in Microthick Layers of Metals(Сумський державний університет, 2017) Plesnetsov, S. Yu.; Migushchenko, R. P.; Petryschev, O. N.; Suchkov, G. M.; Khrypunov, G. S.The results of the mathematical studies on the modeling of high-frequency electromagnetic field conversion in the field of elastic oscillations process in microthick surface layers or electrically conductive ferromagnetic material thin films placed in a magnetic field are given, taking into account the coherence of elastic, electric and magnetic properties of the metal. It is shown that in practical calculations, especially in the case of high-frequency oscillations, it is necessary to take into account thickness of skin layer in which electromagnetic field transforms into acoustic field.Документ Nanostructured Semiconductor Heterostructures for Ultraviolet Sensors, Solar Cells and Semitransparent Diodes Manufactured by Chemical and Electrochemical Methods(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Klepikova, K. S.; Lukianova, O. V.; Korsun, V. E.; Lyubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Nanostructured Thermoelectric Thin Films Obtained by Wet Chemical Synthesis(Sumy State University, 2017) Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Korsun, V. E.; Lyubov, V. M.; Otchenashko, О. N.; Zhadan, D. O.; Kirichenko, M. V.; Nikitin, V. О.; Maslak, M. O.; Khrypunova, A. L.Nanostructured pristine lead sulfide and copper iodide semiconductor films as well as copper doped lead sulfide and iodine-enriched copper iodide layers were obtained on solid and flexible substrates via Chemical Bath Deposition (CBD) and Successive Ionic Layer Adsorption and Reaction (SILAR) methods. Crystal structures, optical, electric and thermoelectric properties of the layers have been studied. It was shown that the obtained films deposited on glass and mica substrates are smooth and continuous, have polycrystalline structures of the corresponding bulk semiconductors with grain sizes of several tens of nanometers. Investigations of the optical properties revealed, that their band gaps are characteristic for the corresponding bulk materials. All obtained semiconductor layers are p-type of conductivity. The resistivity of the lead sulphide films were reduced noticeably by means of their doping with copper. Iodination of the copper iodide films convert them into degenerate semiconductors. Investigations of the temperature dependent resistivity, the Seebeck coefficients and power factors confirmed that the obtained materials are promising for their use in thin-film solar thermoelectric generators with the aim of solar heat transforming into electricity.Документ Nanostructured ZnO arrays fabricated via pulsed electrodeposition and coated with Ag nanoparticles for ultraviolet photosensors(Сумський державний університет, 2018) Klochko, N. P.; Klepikova, K. S.; Petrushenko, S. I.; Kopach, V. R.; Khrypunov, G. S.; Korsun, V. E.; Lyubov, V. M.; Kirichenko, M. V.; Dukarov, S. V.; Khrypunova, A. L.Nanostructured one-dimensional (1-D) ZnO arrays fabricated via pulsed electrodeposition and coated with Ag nanoparticles are researched with the aim of their using in the ultraviolet (UV) photosensors. The results of the crystal structure investigations showed that the pulsed electrodeposited zinc oxide arrays are polycrystalline in nature and matching with hexagonal wurtzite modification of ZnO. To enhance its UV photosensitivity, the silver nanoparticles (AgNPs) with different shape and an average size of 60 nm, as well as 300-500 nm long Ag nanorods with ~30 nm diameter, are precipitated mainly on the (002), (101) and (100) ZnO planes. Study of electrical properties and electronic parameters of the 1-D ZnO and Ag/ZnO nanocomposites using a current-voltage and capacity-voltage characteristics identified the important role of the high double Schottky barriers at the ZnO intergrain boundaries for the creation of great UV photo-sensitivity. It is proved that through monitoring the amount of AgNPs on the ZnO surface the electrical properties and electronic parameters of the Ag/ZnO nanocomposites, and consequently, the output parameters of the UV photosensors can be controlled.Документ Near Ultraviolet Photodetector Based on Electrodeposited in Pulse Mode Zinc Oxide Arrays(Institute of Electrical and Electronics Engineers, 2016) Klepikova, K. S.; Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Lubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Operating temperature effect on the thin film solar cell efficiency(Сумський державний університет, 2019) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Radoguz, S. A.; Khrypunov, M. G.; Prokopenko, D. S.; Zaitseva, L. V.The made research results of the dependence of the film photovoltaic converter efficiency on their operating temperature and their comparison are considered in the paper. The physical mechanisms of temperature influence analysis on output, diode and electronic parameters of photovoltaic converters were conducted. The output parameters determination of the flexible photovoltaic converters was carried out by measurement of light current-voltage characteristics by using illuminator based on powerful semiconductor LEDs with different colors for simulated radiation which is close to the standard ground and ultraviolet solar spectrum. For ensuring effective non-destructive switching of the test specimens of the flexible PVC based on cadmium telluride to the measurement circle, the special contact device was developed and used. The main feature of contact device is four separate vertically moving metal probes in form of semi spheres with polished surfaces, which makes it impossible to puncture the PVC electrodes. These probes have possibility of individual positioning of each probe that is carried out with the help of a hard rotary console of variable length attached to the body and can be pressed with a given effort without impact on the frontal and any rear electrodes of the PVC experiments. The efficiency temperature coefficients of the photovoltaic converter, which make up for devices with a CdTe of 0.14 %/C, CuInSe2 – 0.36 %/C, amorphous silicon - 0.21 %/C were obtained. The analytical processing and analysis of the light diode characteristic effect on the PVC efficiency based on the CdTe showed that the temperature stability of their efficiency is ensured by the diode current density, the incision of which increases by 50 % from 1.9·10 – 9 A to 2.7·10 – 9 A with the temperature rise from 20 °С to 50 °С. At the same time, it has been established for PVC on the CuInSe and amorphous silicon base that the decrease of short circuit current density, open circuit voltage and fill factor of current-voltage characteristics plays the main role in efficiency reduction with rising temperature.Документ Prospectives for Applying of Nanocoatings on Instrumental Tools(2020) Dubonosov, V. L.; Krichkovskaya, L. V.; Demyanenko, D. V.; Khrypunov, G. S.; Vodoriz, O. S.The paper is devoted to development of technology and equipment for obtaining of protective reinforcing and heat-shielding thin-film coatings with controlled structure and their usage in production of tools with improved operating characteristics in technological engineering. Recent times much of attention has been paid to creating of wear-resistant hardening coatings and development of multilayer nanosized coatings. By changing the application parameters of such coatings, one can control the composition, particle size, morphology as well as thickness and number of individual layers. Due to this, they can be easily adapted to obtain optimal physical and mechanical properties. The most effective method for coating of cutting tools is ion-plasma vacuum-arc coating deposition (Arc-PVD) which is characterized by high deposition rate and high ionization degree of the vaporized material providing increased adhesion strength of a coating, and this is the main objective of the article.Документ Single-crystal silicon solar cell efficiency increase in magnetic field(Scientific and Technological Corporation "Institute for Single Crystals", 2010) Zaitsev, R. V.; Kopach, V. R.; Kirichenko, M. V.; Lukyanov, E. O.; Khrypunov, G. S.; Samofalov, V. N.It is established in experiment that efficiency of unijunction (UJ) single-crystal silicon solar cells (Si-SC) with horizontal n⁺-p-p⁺ diode structure may increase by a factor of approximately 1.1 after their holding at room temperature during 7 days in perpendicularly oriented stationary magnetic field with 0.2 T induction. The subsequent stabilizing of the obtained positive effect is shown to be realizable by attachment of a thin magnetic vinyl layer (creating in the UJ Si-SC base crystal a magnetic field with induction not exceeding 0.05 T) to the UJ Si-SC at the back electrode side.