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Title: The structure of Mo/Si multilayers prepared in the conditions of ionic assistance
Authors: Zubarev, Evgeniy N.
Kondratenko, V. V.
Sevryukova, V. A.
Yulin, S. A.
Feigl, T.
Kaiser, N.
Keywords: the structure of Mo/Si multilayers; cross-sectional electron microscopy; small-angle X-ray reflectivity; X-ray diffraction; структура періодичних багатошарових Mo/Si композицій; електронна мікроскопія поперечного перерізу; малокутова відбивна здатність рентгенівських променів; дифракція рентгенівських променів
Issue Date: 2008
Publisher: Springer
Citation: The structure of Mo/Si multilayers prepared in the conditions of ionic assistance / E. N. Zubarev [et al.] // Applied Physics A. – 2008. – Vol. 90, iss. 4. – P. 705–710.
Abstract: The influence of a negative substrate-applied bias potential on the structure of periodic Mo/Si multilayer compositions has been investigated by means of cross-sectional electron microscopy, small-angle X-ray reflectivity, X-ray diffraction and by modeling the small-angle spectra. It is known that the crystalline structure of molybdenum layers is the main source of interface roughness. In the absence of a bias potential application, the interface roughness tends to develop from the substrate towards the surface of a Mo/Si multilayer composition. A negative bias potential (up to −200 V) applied to a substrate during silicon layer deposition leads to smoother interfaces and improves the layer morphology. After increasing the bias potential over −200 V a considerable growth of an amorphous interlayer transition zone can be observed at Si-on-Mo interfaces. By raising the bias potential during the deposition of Mo layers a development of roughness at Mo-on-Si interfaces as well as growing interlayer thicknesses were found.
Appears in Collections:Кафедра "Фізика металів і напівпровідників"

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