Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions
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Дата
2016
ORCID
DOI
dx.doi.org/10.1155/2016/1815205
Науковий ступінь
Рівень дисертації
Шифр та назва спеціальності
Рада захисту
Установа захисту
Науковий керівник
Члени комітету
Видавець
Анотація
Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversionmainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.
Опис
Ключові слова
high-voltage, solar cells, electrical power, radiation
Бібліографічний опис
Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions [Electronic resource] / M. O. Semenenko [et al.] // International Journal of Photoenergy. – Electronic text data. – 2016. – Vol. 2016. – P. 1-8. – Access mode: https://www.hindawi.com/journals/ijp/2016/1815205/. free (date of the application 15.09.2022.).