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Документ Structural transformation in C/Si multilayer after annealing(Научный центр физических технологий МОН Украины; НАН Украины, 2012) Zhuravel, I. O.; Bugayev, Ye. A.; Konotopsky, L. E.; Zubarev, E. M.; Sevryukova, V. A.; Kondratenko, V. V.Amorphous C/Si multilayers were prepared by DC magnetron sputtering technique and investigated by transmission electron microscopy and low-angle x-ray diffraction methods after annealing at 650 and 950 °C. The amorphous interlayers of 0.5 − 0.6 nm thick were found at C/Si and Si/C interfaces being of different density and composition. Amorphous structure of the multilayer is stable up to 950 °C when crystallization of α-SiC occurs and voids form in α-Si layer.