Влияние генерации колебаний полупроводниковых структур элементной базы технических средств на параметры внутренней электромагнитной совместимости в условиях воздействия внешнего электромагнитного излучения

Abstract

It is shown in this work that damping ofplasmons is caused by their transformation into van Kampen waves, boundary conditions for function of distribution of particles in flow are formulated, expressions for oscillation decrement are obtained and kinetic theory of interaction of surface plasmons with electron flow crossing an interface has been formed. The expressions for decrements (time char-acteristics of degree of oscillation damping) obtained in the work allow determining power of their radiation in conditions of action of external electromagnetic field. This process is characterized bydistortion of performance (volt-ampere) characteristics of semiconduc tor devices and causes significant influence on their electromagnetic compatibility. Calculated relations connecting the value of dec-rement (increment) of instability of surface oscillations in semiconductor structures, caused by presence of currents induced by extra-neous electromagnetic radiation, with parameters of semiconductor structures: concentration of free carriers, permittivity, structure dimensions have been obtained. Comparative analysis of existing experimental and calculated data for typical values of parameters of semiconductor devices under action ofpulsed electromagnetic radiation shows that the value of energy of radiation (attenuation) of oscillations is determined by the same order of the value and has common tendencies of variation depending on the values of physical parameters of component materials and applied voltage pulse.