Моделювання основних характеристик сонячних елементів на основі гетеропереходів n-ZnS/p-CdTe і n-CdS/p-CdTe

Abstract

Modeling of dark and light I-V characteristics and spectral response of quantum efficiency of solar cell films on the basis of ideal n-ZnS/p-CdTe and n-CdS/p-CdTe heterojunctions with the use of SCAPS-3200 software environment is held in this work. It is shown that the replacement of traditional material of window layer of photovoltaic devices with more wide area ZnS material leads to increase of their efficiency. The constructive parameters of solar cells on the basis of multilayer n-ZnS/p-CdTe system which provide their maximal efficiency were established. It makes possible to optimize the technology of obtaining real cheap and highly effective thin film solar energy transformers.