Физика обратимых отказов полупроводниковых структур при воздействии электромагнитных помех

Abstract

Mechanisms of occurrence of instabilities ofnatural oscillations of semiconductor structures, caused by their interaction withfluxes of charged particles in conditions of influence of external electromagnetic radiation are determined. It is shown that influence of pulsed electromagnetic radiation is accompanied by occurrence of currents in conducting elements of articles and by advent of their internal fields. The theory of collisionless damping of surface polaritons in quantum and classic approximations has been developed. Mechanisms of damping of surfaceplasmons have been studied in conditions when temperature of carriers of conducting rigid bodyis much lower than plasmon energy (quantum approximation). Expressions for decrements of surface plasmons in presence of infinitely high and infinitely low potential barrier atinterface were obtained. The processes of damping of surface oscillations when interaction of waves and particles has character of random collisions and is described by method of secondary quantization of system (occupation number representation) were investigated. Kinetic equation describing change of the number of surface plasmons as a result of their interaction with conduction electrons was obtained; its solutions determining decrement of oscillations and power of spontaneous radiation of particles are presented. Physical model of origin of reversible failures (of influence of currents induced by electromag-netic radiation on volt-ampere characteristics of semiconductor devices) was substantiated. Domains of parameters of external electromagnetic radiation, for those this physical model is realized, were determined.