Кафедра "Системи інформації ім. В. О. Кравця"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/7488

Офіційний сайт кафедри http://web.kpi.kharkov.ua/si

Від 3 червня 2019 року кафедра має назву "Системи інформації ім. В. О. Кравця", первісна назва – "Системи інформації".

Кафедра "Системи інформації" створена 30.06.1993 року у складі факультету автоматики та приладобудування. Від 2004 року входила до складу факультету "Комп’ютерні та інформаційні технології", від 2021 року – Навчально-наукового інженерно-фізичного інституту, від 2022 року – Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут".

Кафедра перейменована на честь її засновника і першого завідувача (1993-2009), кандидата технічних наук, Почесного доктора Мішкольцького університету (Угорщина), академіка Української технологічної академії, Заслуженого працівника освіти України, засновника наукової школи "Інфокомунікаційні системи та технології", професора Кравця Валерія Олексійовича. Від 1989 року по 2014 рік Кравець В. О. плідно працював на посаді проректора з навчальної роботи та міжнародних зв’язків НТУ "ХПІ".

Від 2011 року при кафедрі створено мережеву академію CISCO. Кафедра є співзасновником Учбово-наукового виробничого комплексу (УНВК), що об’єднує понад 25 установ, які працюють в галузі телекомуникації

У складі науково-педагогічного колективу кафедри працюють: 2 доктора технічних наук, 1 доктор фізико-математичних наук, 5 кандидатів технічних наук, 2 кандидата фізико-математичних наук; 3 співробітника мають звання професора, 5 – доцента, 1 – старшого наукового співробітника.

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2017 - 201922020 - 20211

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Автор: search.filters.author.Breslavets, Vitaliy

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  • Ескіз
    Документ
    Excitation of magnetoplasma oscillations in semiconductor structures by fluxes of charged particles
    (Національний технічний університет "Харківський політехнічний інститут", 2021) Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, Igor; Fomenko, Andrii
    The subject of the papers is the processes of analysis and physical model of excitation (amplification) of magnetoplasma oscillations (helicons) by fluxes of charged particles (electrons) in the presence of a constant magnetic field. This model is based on the Cherenkov mechanism for converting kinetic energy of particles into the energy of natural electromagnetic oscillations of solid-state (semiconductor) structures under resonance conditions when the particle velocities coincide with phase velocities of oscillations. The aim here is to justify the formulation of theoretical studies basing on the proposed physical model of generation (amplification) of electromagnetic oscillations (emergence of oscillation instabilities, i.e., exponential growth of their amplitude). We define parameters intervals for the external magnetic field, particle fluxes and types of semiconductor structures which this physical model is applied to. We perform theoretical study of the influence charged particle fluxes have on waveguide characteristics of semiconductor structures. The study justifies the possibility of generation and amplification of magnetoplasma oscillations in the submillimeter range. Our objectives are theoretical studies of the interaction of moving charges with electromagnetic oscillations of a semiconductor structure under conditions of Cherenkov radiation. The methods used are the method of successive approximations for solving the dispersion equations for a system of charged particle flux - semiconductor structure within the framework of hydrodynamic approach. The following results are obtained: Theoretical studies of the functioning of semiconductor components of electrical radio equipment in the presence of charged particle fluxes have been carried out. It is shown that the effect of the particle flux is characterized by the emergence of oscillation instabilities in the semiconductor structure. We have determined one of the mechanisms for the excitation of magnetoplasma oscillations based on the interaction of moving charges with the intrinsic fields of the structures that constitute a semiconductor unit. Such equipment failures occur under conditions of Cherenkov radiation. We have shown that this interaction leads to appearance of a mode of oscillation generation. The results of a comparative analysis of the data obtained in this work make it possible to use the proposed physical model to determine the criteria for the occurrence and development of instabilities of magnetoplasma oscillations. Conclusions. The results obtained in this work can be used in the development of active microwave range devices (amplifiers, generators and transducers of electromagnetic oscillations of the millimeter and submillimeter bands). The comparative analysis of quantitative estimates of the growth rates of oscillation instabilities, depending on the spatial configuration of the acting field (when induced current is parallel to the structure boundary), carried out in this work, provides a solution to the problem of optimizing the operating characteristics of active microwave devices.
  • Ескіз
    Документ
    Electromagnetic compatibility of semiconductor structures with a two-dimensional electron layer
    (Національний технічний університет "Харківський політехнічний інститут", 2019) Kravchenko, Volodymyr; Knyazev, Volodymyr; Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, Igor
    The subject matter is the mechanisms of interaction of the flow of charged particles with the surface plasmons of a two-dimensional electron layer (2D) due to the action of external pulsed electromagnetic radiation (EMP).The aim is obtaining design relations that determine to what degree the instabilities of natural vibrationsof a two-dimensional electronic layer of a semiconductor structure may influence the performance of semiconductor devices. The objectives area model of occurrence of reversible failures of radio products arising from the transformation of energy of currents induced by external pulsed radiation to excite electrostatic oscillations of a two-dimensional electronic layer of semiconductor structures. The methodsused areanalytical methods for solving electrodynamics (Maxwell) equations and material equations in the framework of kinetic approach. The following resultshave been obtained: The mechanisms of interaction of the flow of charged particles with the natural electromagnetic vibrations of a two-dimensional electron gas occurring due to the presence of a potential barrier at the interface have been studied. Investigations of functioning of semiconductor components of radio products (structures with two-dimensional electron gas) under the influence of strong pulsed electromagnetic fields have been carried out. A kinetic equation describing the change in thenumber of electromagnetic oscillations of such a system has been obtained. The solution of the equation has been found, which allows determining the influence of the barrier on the instability increment of surface vibrations as well as the contributions of the transmitted and reflected components of the particle flux to the increment. Equations for the increment of instabilitie sallow us to determine the energy loss of the induced currents on the excitation of natural oscillations i.e. the emergence of a mode of oscillation generation, which is characterized by a change in the volt-ampere characteristics of radio devices. Conclusion. A comparative analysis of the instabilities of vibrations of structures with a two-dimensional electron gas has been carried out under conditions when the interaction of waves and particles is randomand deterministic. It is shown that the differences in the expressions for increments are associated with a change in the size of the region of interaction of waves and particles. Differences in the influence of the potential barrier on the increment are established in cases where the interaction of surface plasmons and charged particles is determined or has the character of random collisions. The mechanisms of the influence of the boundary on the interaction of surface electromagnetic waves and electrons in the presence of a potential barrier are determined. I ntrinsic electromagnetic oscillations of a two-dimensional electron layer are taken as research objects. The results obtained in the work can be used to assess the operability of electronic equipment in millimeter and submillimeter ranges under the influence of pulsed electromagnetic fields.
  • Ескіз
    Документ
    Noise-like signals in wireless information transmission systems
    (NTU "KhPI", 2017) Serkov, A.; Breslavets, Vitaliy; Tolkachov, M.; Churyumov, G.; Issam, Saad
    The subject matteris analysis and evaluation of efficiency of noise-like signals in wireless information transmission systems. The aim is qualityof service improvement for mobile subscribers, due to communication channel multiplexing using complex signal-code structures. The objective is development of a systemic view of the technology of information transmission using ultra-short pulse signals focusing on main phenomena that arise at different stages of signal transmission in a wireless information transmission system. The methods use dare sequential analysis, simulation modeling and digital signal coding. The following results have been obtained. An antenna design featuring an expanding slit has been proposed for effective emission and receptionof noise-like signals. A method for controlling radiation pattern of such antenna array has been developed. Gaussian Monocycle coding of information with time position-pulse modulation has been justified to be used as a noise-like signal. It has been shown that for the organization of independent channels in one frequency band, it is practical touse a system of orthogonal codes, e.g. Walsh sequence. Due to accumulation of pulses of a useful information signal in the receiver correlator, significant increase insignal-to-noise ratio becomes possible, which enables information transmission over a wide frequency range well below the noise level. As a result, a systematic understanding of the technology of information transmission using ultra-short pulse signals in wireless information transmission systems is developed and a quantitative evaluation of the efficiency of the proposed technical solutionsis provided. Conclusion. The use of noise-like signals in wireless information transmission systems provides for high data transmission rates with high interference immunity and tapping protection communication channel. The ability to operate with low emitted power and the high penetrability of noise-like signals through various obstacles, for example, walls, allow meeting the requirements for electromagnetic compatibility and ensuring stable communication in conditions of multipath propagation of radio waves. These circum stances form the basis for the development and implementation of information transfer technology using noise-like signals when designingoffice networks.