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Документ In situ TEM study of crystals growth in amorphous Ti-Zr-Ni films at electron beam irradiation(2023) Bagmut, A. G.; Bagmut, I. A.; Devizenko, A. Yu.Using the methods of in situ transmission electron microscopy (TEM) with video recording of the phase transformations the structure and kinetics of crystal growth in amorphous films of Ti41Zr41Ni18 were studied. The films were obtained by magnetron sputtering of a Ti-Zr-Ni target with deposition on substrates at T=30 °C. The amorphous (X-ray amorphous) state of the film was retained up to a temperature of 650 °C, above which a polymorphous transformation took place with the formation of crystals with the fcc structure. Video frame analysis shows that the nucleation and growth of flat crystals with fcc structure take place at electron beam irradiation. The speed of movement of the crystallization front did not depend on the time at a constant intensity of the electron beam. A linear dependence on time for the radius of the crystal and a quadratic one for the fraction of the crystalline phase are performed. The dimensionless parameter of the relative length of crystallization was about three thousand.Документ Scandium-silicon multilayer X-ray mirrors with CrB2 barrier layers(Сумський державний університет, 2018) Pershyn, Yuriy P.; Devizenko, A. Yu.; Zubarev, Evgeniy N.; Kondratenko, Valeriy V.; Voronov, Dmitriy L.; Gullikson, E. M.Methods of X-ray reflectometry λ0.154 nm), cross-sectional transmission electron microscopy and re flectometry in the EUV region (λ = 41-51 nm) were used to investigate the barrier properties of CrB2 layers 0.3-1.3 nm thick in Sc/CrB2/Si multilayer X-ray mirrors (MXMs) deposited by DC magnetron sputtering. It is shown that barrier layers of ~ 0.3 nm separate Sc and Si layers completely and prevent interacting the Sc and Si layers. Thinner chromium diboride layers interact with the matrix layers forming interlayers containing mostly ScB2 on the Si-on-Sc interfaces and CrSi2 on the Sc-on-Si ones. Scandium-silicon MXMs with barrier layers on the both interfaces are shown to retain high reflectivity at the wavelength of λ ~ 47 nm.Документ Growth and structure of WC/SI multilayer X-ray mirror(Національний науковий центр «Харківський фізико-технічний інститут», 2018) Pershyn, Yuriy P.; Chumak, V. S.; Shypkova, I. G.; Mamon, Valentine V.; Devizenko, A. Yu.; Kondratenko, Valeriy V.; Reshetnyak, M. V.; Zubarev, Evgeniy N.WC/Si multilayer X-ray mirrors (MXMs) with nominal layers thicknesses of 0.2…30.3 nm (periods: 0.7…38.9 nm) were deposited by direct current magnetron sputtering and studied by X-ray diffraction and crosssectional transmission electron microscopy (TEM). Carbide and silicon layers are amorphous throughout the studied thickness range. The WC layers interact with Si layers with formation of tungsten silicides (WSi2, W5Si3) and silicon carbide in as-deposited state. The bottom interlayer (WC-on-Si) consists of two subzones of approximately equal thickness. An estimation of the thickness, density, and composition of all layers is made. Based on the experimental data, a five-layer model of the WC/Si MXM structure is suggested.Документ Structure and mechanical stresses in TaSi 2 /Si multilayer(STC "Institute for Single Crystals", 2018) Devizenko, A. Yu.; Kopylets, I. A.; Kondratenko, V. V.; Pershyn, Yuriy P.; Zubarev, Evgeniy N.; Savitskiy, B. A.; Devizenko, I. Y.