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Публікація Growth and structure of thermally evaporated Bi2Te3 thin films(Elsevier, 2016) Rogacheva, E. I.; Budnik, A. V.; Dobrotvorskaya, M. V.; Fedorov, A. G.; Krivonogov, S. I.; Mateychenko, P. V.; Nashchekina, O. N.; Sipatov, A. Yu.The growth mechanism, microstructure, and crystal structure of the polycrystalline nBi2Te3 thin films with thicknesses d = 15 – 350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi2Te3. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5 – 2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi2Te3 thin films of a sufficiently high quality.Документ Structure of p-Bi₂Te₃ thin films prepared by single source thermal evaporation in vacuum(2015) Rogacheva, E. I.; Budnik, A. V.; Fedorov, A. G.; Krivonogov, A. S.; Mateychenko, P. V.The growth mechanism, microstructure, and crystal structure of thin Bi₂Te₃ films with thicknesses d = 28 - 620 nm prepared by thermal evaporation of stoichiometric Bi₂Te₃ crystals in vacuum onto glass substrates were studied using X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, and atomic force microscopy. The obtained thin films were polycrystalline, exhibited p-type conductivity and did not contain any other phases except for Bi₂Te₃. It was shown that with increasing film thickness, the crystallite size increased up to ~ 700-800 nm. It was established that the preferential orientation of crystallite growth was [00l] direction corresponding to a trigonal axis С3 in hexagonal lattice. When the film thickness exceeded ~ 200-250 nm, along with reflections from (00l) planes, reflections from other planes appeared, which indicated a certain disorientation of crystallites. The results obtained show that using a simple and inexpensive method of thermal evaporation from a single source and choosing optimal technological parameters, one can grow thin p-Bi₂Te₃ films of sufficiently high quality.