Кафедри
Постійне посилання на розділhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/35393
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16 результатів
Результати пошуку
Документ Development and new application of single-crystal silicon solar cells(2011) Khrypunov, G. S.; Kopach, V. R.; Kirichenko, M. V.; Zaitsev, R. V.Документ Nanostructured Semiconductor Heterostructures for Ultraviolet Sensors, Solar Cells and Semitransparent Diodes Manufactured by Chemical and Electrochemical Methods(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Klepikova, K. S.; Lukianova, O. V.; Korsun, V. E.; Lyubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Conception of Flexible Thin-Film Solar Battery for Autonomous Hybrid Thermophotoenergy Unit(Institute of Electrical and Electronics Engineers, 2016) Kirichenko, M. V.; Zaitsev, R. V.; Lobotenko, D. S.; Zaitseva, L. V.Документ Automation of Quasi-Closed Space Method Based on ARM Microcontroller(Institute of Electrical and Electronics Engineers, 2016) Zaitsev, R. V.; Kirichenko, M. V.; Prokopenko, D. S.; Zaitseva, L. V.Документ Near Ultraviolet Photodetector Based on Electrodeposited in Pulse Mode Zinc Oxide Arrays(Institute of Electrical and Electronics Engineers, 2016) Klepikova, K. S.; Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Lubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Hybrid thermophotoenergy module with thin-film solar cells(Taras Shevchenko National University of Kyiv, 2016) Zaitsev, R. V.; Zaitseva, L. V.; Kirichenko, M. V.Документ Investigation the parameters of multijunction single crystal silicon solar cells with vertical diode cells test samples(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Polezhaeva, O. V.; Zaitsev, R. V.; Kopach, V. R.; Kirichenko, M. V.Документ Attestation of solar cells by back EMF method(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Lobatenko, D. D.; Kirichenko, M. V.; Zaitsev, R. V.; Kopach, V. R.Документ Development and approbation the automatization complex current-voltage characteristics measurement(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Prokopenko, D. S.; Zaitsev, R. V.; Kirichenko, M. V.Документ Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon(Scientific and Technological Corporation "Institute for Single Crystals", 2011) Zaitsev, R. V.; Kirichenko, M. V.; Doroshenko, A. N.; Khrypunov, G. S.Using the computer simulation method it was studied the dependences of nonequili-brium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the diode structures based on p-type conductivity boron doped silicon crystals with 10 Ohm-cm resistivity, grown by the Czochralski method. A number of obtained results well correlated with the experimental data related to the effects of photon degradation in solar cells which based on considered type silicon crystals (Si-SC) and influence of a stationary magnetic field on such devices efficiency. Overall, our results provide additional possibility for the evolution features prediction of electronic, and consequently, functional parameters, not only for Si-SC, but also for other devices based on such diode structures. It will allow looking for the most efficient and cost effective ways to optimize their design-technological solutions, and also estimates their reliability and durability level.