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Документ Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon(Scientific and Technological Corporation "Institute for Single Crystals", 2011) Zaitsev, R. V.; Kirichenko, M. V.; Doroshenko, A. N.; Khrypunov, G. S.Using the computer simulation method it was studied the dependences of nonequili-brium electrons lifetime from concentration of elementary bulk point defects and various complexes of the bulk point defects, which may be present in the diode structures based on p-type conductivity boron doped silicon crystals with 10 Ohm-cm resistivity, grown by the Czochralski method. A number of obtained results well correlated with the experimental data related to the effects of photon degradation in solar cells which based on considered type silicon crystals (Si-SC) and influence of a stationary magnetic field on such devices efficiency. Overall, our results provide additional possibility for the evolution features prediction of electronic, and consequently, functional parameters, not only for Si-SC, but also for other devices based on such diode structures. It will allow looking for the most efficient and cost effective ways to optimize their design-technological solutions, and also estimates their reliability and durability level.Документ Double-layer ITO/Al back surface reflector for single-junction silicon photoconverters(Scientific and Technological Corporation "Institute for Single Crystals", 2008) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.It has been shown that to increase the efficiency and manufacturability of single-crystal silicon photovoltaic solar energy converters (Si-PVC) with 180-200 μm thick base crystals having a polished photoreceiving surface and double-layer back surface reflector (BSR) consisting of a transparent oxide and aluminum layers, a conductive transparent indium-tin oxide (ITO) layer of 0.25 μm interference thickness is to be used as the nonmetallic BSR layer. It provides the ITO/Al BSR reflection coefficient in the range of 85 < R < 96 % for solar radiation photoactive component incident the Si-PVC back surface at substantially zero contribution of ITO layer resistance to the device series resistance. In the case of Si-PVC with inverted pyramid type texture of crystal photoreceiving surface at which the specificity of light distribution in the crystal causes total reflection of radiation from Si/ITO interface, the ITO layer thickness should be experimentally optimized in the 1-2 μm range independently of base crystal thickness to minimize the photoactive radiation losses and ITO layer resistance.Документ New approach to the efficiency increase problem for multi-junction silicon photovoltaic converters with vertical diode cells(Scientific and Technological Corporation "Institute for Single Crystals", 2008) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.; Bondarenko, S. A.It is shown, that for efficiency increase of multi-junction photovoltaic solar energy converters with vertical diode cells (VDC) on the basis of single-crystal silicon the modernization of VDC by the introduction along their vertical Si-boundaries single-layer indiumtin oxide reflectors by thickness more than 1 μm is necessary.Документ Back surface reflector optimization for thin single crystalline silicon solar cells(Scientific and Technological Corporation "Institute for Single Crystals", 2007) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.; Tymchuk, I. T.; Antonova, V. A.; Listratenko, A. M.It has been shown that for single crystalline silicon solar cells (Si-SC) with 180-200 μm thick base crystals, the optimum back surface reflector (BSR) is TiO₂/Al with 0.18 μm thick oxide layer. At such BSR, the reflection coefficient for photoelectric active sunlight reaching the back surface of Si-SC at 0.88-1.11 μm wavelengths attains 81 to 92 % against of 71 to 87 % at direct Al contact with back surface of silicon base crystal.Документ The Сadmium Telluride Thin Films for Flexible Solar Cell Received by Magnetron Dispersion Method(Sumy State University, 2017) Zaitsev, R. V.; Khrypunov, G. S.; Veselova, N. V.; Kirichenko, M. V.; Kharchenko, M. M.; Zaitseva, L. V.For the purpose of creation of thin-film photoelectric converters on the basis of sulfide and telluride of cadmium the pilot studies of process of magnetron dispersion on a direct current of telluride of cadmium and influence of the modes of magnetron dispersion on crystalline structure of films of CdTe are conducted. CdTe films for basic layers of sheet photoelectric converters on flexible polyimide substrate by the method of magnetron dispersion on a direct current are received for the first time. It is experimentally shown that "chloride" processing of the received layers of telluride of cadmium leads to transformation of metastable hexagonal modification of telluride of cadmium in stable cubic. At the same time at the expense of the eutectic recrystallization body height of the sizes of areas of a coherent dispelling much and decrease by 1,5 times of level of microstrains is observed.