Кафедри
Постійне посилання на розділhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/35393
Переглянути
4 результатів
Результати пошуку
Документ Nanostructured Semiconductor Heterostructures for Ultraviolet Sensors, Solar Cells and Semitransparent Diodes Manufactured by Chemical and Electrochemical Methods(Прикарпатський національний університет імені Василя Стефаника, 2017) Klochko, N. P.; Khrypunov, G. S.; Kopach, V. R.; Klepikova, K. S.; Lukianova, O. V.; Korsun, V. E.; Lyubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Conception of Flexible Thin-Film Solar Battery for Autonomous Hybrid Thermophotoenergy Unit(Institute of Electrical and Electronics Engineers, 2016) Kirichenko, M. V.; Zaitsev, R. V.; Lobotenko, D. S.; Zaitseva, L. V.Документ Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions(2016) Semenenko, M. O.; Dusheiko, M. G.; Mamykin, S. V.; Ganus, V. O.; Kirichenko, M. V.; Zaitsev, R. V.; Kharchenko, M. M.; Klyui, N. I.Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversionmainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.Документ Operating temperature effect on the thin film solar cell efficiency(Сумський державний університет, 2019) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Radoguz, S. A.; Khrypunov, M. G.; Prokopenko, D. S.; Zaitseva, L. V.The made research results of the dependence of the film photovoltaic converter efficiency on their operating temperature and their comparison are considered in the paper. The physical mechanisms of temperature influence analysis on output, diode and electronic parameters of photovoltaic converters were conducted. The output parameters determination of the flexible photovoltaic converters was carried out by measurement of light current-voltage characteristics by using illuminator based on powerful semiconductor LEDs with different colors for simulated radiation which is close to the standard ground and ultraviolet solar spectrum. For ensuring effective non-destructive switching of the test specimens of the flexible PVC based on cadmium telluride to the measurement circle, the special contact device was developed and used. The main feature of contact device is four separate vertically moving metal probes in form of semi spheres with polished surfaces, which makes it impossible to puncture the PVC electrodes. These probes have possibility of individual positioning of each probe that is carried out with the help of a hard rotary console of variable length attached to the body and can be pressed with a given effort without impact on the frontal and any rear electrodes of the PVC experiments. The efficiency temperature coefficients of the photovoltaic converter, which make up for devices with a CdTe of 0.14 %/C, CuInSe2 – 0.36 %/C, amorphous silicon - 0.21 %/C were obtained. The analytical processing and analysis of the light diode characteristic effect on the PVC efficiency based on the CdTe showed that the temperature stability of their efficiency is ensured by the diode current density, the incision of which increases by 50 % from 1.9·10 – 9 A to 2.7·10 – 9 A with the temperature rise from 20 °С to 50 °С. At the same time, it has been established for PVC on the CuInSe and amorphous silicon base that the decrease of short circuit current density, open circuit voltage and fill factor of current-voltage characteristics plays the main role in efficiency reduction with rising temperature.