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Документ Effect of aging on thermoelectric properties of the Bi2Te3 polycrystals and thin films(Науково-технологічний комплекс "Інститут монокристалів", 2021) Rogacheva, E. I.; Doroshenko, A. N.; Novak, K. V.; Sipatov, A. Yu.; Khramova, T. I.; Saenko, S. A.The temperature dependences (77-300 K) of the thermoelectric (TE) properties (the Seebeck coefficient S, electrical conductivity σ, Hall coefficient RH, Hall charge mobility μH>, and TE power factor P) were studied for freshly prepared and for exposed to air at room temperature during 5 years p-Bi2Te3 (60.0 at.% Te) and n-Bi2Te3 (62.8 at.% Te) polycrystals and thin films grown from them by thermal evaporation in vacuum. It was found that after aging, in the p- and n-Bi2Te3 bulk crystals and in the n-type film obtained from the n-Bi2Te3 crystal, type of conductivity is reserved but the p-type film obtained from the p-Bi2Te3 crystal, change the type of conductivity from hole to electronic. The activation energies of possible defect states were determined using the RH(T) dependences. After aging, at the temperatures close to room temperature, the p values of n-Bi2Te3 and p-Bi2Te3 polycrystals decreases by ~ 20 %, but p values of the n-type film grown from n-Bi2Te3 crystal increases by 20-30 %. In the p-type film obtained from p-Bi2Te3 polycrystal, and having changed the type of conductivity after aging, the p values exceed the p values of a film obtained from n-Bi2Te3 polycrystal by ~ 35 % at 250 K and by 25 % at 300 K, remaining at these temperatures below the p values for n-Bi2Te3 polycrystal after aging by ~ 15 %.Документ Механічні та термоелектричні властивості напівпровідникових твердих розчинів PbSe1−xTex (x = 0–0,045)(Інститут металофізики ім. Г. В. Курдюмова НАН України, 2020) Водоріз, Ольга Станіславівна; Тавріна, Тетяна Володимирівна; Ніколаєнко, Ганна Олександрівна; Рогачова, Олена ІванівнаОдержано залежності мікротвердості H, коефіцієнта Зеєбека S та електропровідності σ від складу литих і гарячепресованих полікристалів напівпровідникових твердих розчинів заміщення PbSe1−xTex (x = 0–0,045) за кімнатної температури. Встановлено, що всі зразки мають дірковий тип провідності. На залежностях H(x), S(x) і σ(x) спостерігаються концентраційні аномалії властивостей поблизу x = 0,01 та 0,02 як для литих, так і для пресованих зразків. Наявність аномалій пов’язується з ефектами взаємодії атомів в домішковій підсистемі кристалу при переході від розведених до концентрованих твердих розчинів. Показано, що спосіб приготування зразків (литі або гарячепресовані) не впливає на наявність аномальних ділянок на залежностях властивостей від складу твердого розчину, але дещо змінює їх характер. При практичному застосуванні твердих розчинів PbSe1−xTex необхідно приймати до уваги немонотонний характер зміни властивостей.Документ Mechanical and Thermoelectric Properties of PbSe1-xTex Solid Solutions(Ivan Franko National University of Lviv, 2018) Vodoriz, O. S.; Tavrina, T. V.; Rogachova, O. I.The microhardness, Seebeck coefficient and electrical conductivity of PbSe1-xTex (x = 0 – 0.045) solid solutions were investigated at room temperature. In the range of small concentrations of PbTe (in the vicinity of x = 0.01 and x = 0.02) an anomalous decrease in microhardness, increase in Seebeck coefficient and electrical conductivity were registered. The concentration anomalies were interpreted as the transition from diluted to concentrated solid solutions when the interaction between impurity atoms starts to make a significant contribution to the change of the properties of materials.Документ Size effects in thin PbTe films(Прикарпатський національний університет імені Василя Стефаника, 2017) Menshikova, S. I.; Rogacheva, E. I.Публікація Thickness-dependent quantum oscillations of the transport properties in bismuth selenide thin films(Elsevier, 2019) Rogacheva, E. I.; Menshikova, S. I.; Sipatov, A. Yu.; Nashchekina, O. N.The objects of the present study were thin n-Bi2Se3 films with thicknesses d = 10–100 nm, grown by thermal evaporation of n-Bi2Se3 crystals in vacuum onto heated glass substrates. The room temperature d-dependences of the Seebeck coefficient, the Hall coefficient, and the electrical conductivity of the films exhibited an oscillatory behavior, which we attribute to quantum size effects. Such interpretation of the results is supported by the fact that experimentally determined values of the oscillation period are in quite good agreement with the theoretically calculated ones. We suggest that the large amplitude and undamped character of the oscillations in the studied range of thicknesses are connected with the topologically protected gapless surface states of Bi2Se3. The observed oscillatory character of the d-dependences of the transport coefficients should be taken into account when 2D-structures are applied in nanothermoelectricity and other fields of nanoscience and nanotechnology.Документ Thermoelectric properties of cold-pressed (Bi₁₋ₓSbₓ)₂Te₃ semiconductor solid solutions(FOP Panov A. M., 2017) Martynova, K. V.; Rogacheva, E. I.Публікація Effect of Deviation from Stoichiometry on Thermoelectric Properties of Bi₂Te₃ Polycrystals and Thin Films in the Temperature Range 77-300 K(Сумський державний університет, 2019) Rogacheva, E. I.; Novak, K. V.; Doroshenko, A. N.; Nashchekina, O. N.; Budnik, A. V.Bi₂Te₃ semiconductor compound and Bi₂Te₃-based solid solutions are presently among the best lowtemperature thermoelectric materials. One of the methods of controlling the conductivity type and properties of Bi₂Te₃ is changing the stoichiometry of this compound. Earlier, we have obtained the room-temperature dependences of mechanical and thermoelectric properties of Bi₂Te₃ polycrystals on the degree of deviation from stoichiometry. The goal of this work is to investigate the behavior of such dependences at other temperatures. Bismuth telluride polycrystals with compositions in the range of 59.6-67.5 at. % Te were obtained, and for all the crystals the Seebeck coefficient, the Hall coefficient, electrical conductivity and charge carrier mobility were measured in the temperature range 77-300 K. On the basis of the temperature dependences, the isotherms of kinetic coefficients were plotted. It was found that similar to the room-temperature isotherms, the isotherms at lower temperatures were non-monotonic: they exhibited inversion of the conductivity sign between 60.5 and 61.0 at. % Te and extrema near 60.0 and 63.0 at. % Te. The experimental data are interpreted taking into account changes in the band and defect structures of Bi₂Te₃ under varying stoichiometry. The obtained results make it possible to control thermoelectric properties of Bi₂Te₃ polycrystals in the temperature range 77-300 K by changing the degree of deviation from stoichiometry.Публікація Percolation effects and self-organization processes in Bi₂(Te₁₋ₓSeₓ)₃ solid solutions(Науково-технологічний комплекс "Інститут монокристалів", 2019) Rogacheva, E. I.; Shelest, T. N.; Martynova, E. V.; Doroshenko, A. N.; Nashchekina, O. N.; Men'shov, Yu. V.The room-temperature dependences of microhardness H, electrical conductivity σ, the Seebeck coefficient S, and thermoelectric power factor P on composition of Bi₂(Te₁₋ₓSeₓ)₃ solid solutions were measured in the concentration range x = 0 - 0.07. In the intervals x = 0.0075 - 0.0175 and x = 0.025 - 0.035, an anomalous decrease in H and S and increase in σ with increasing x were observed. The first concentration-dependent anomaly was attributed to critical phenomena, accompanying a percolation-type phase transition. The percolation threshold xc and the radius of deformation spheres R₀ around Se impurity atoms were estimated. The second anomaly is assumed to be connected with a short-range ordering in the solid solution. The non-monotonic character of the dependences of H on the load on an indenter, whose behavior depended on the impurity concentration, was attributed to the interaction of the deformation fields created by dislocations and impurity atoms.Документ Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋ₓSbₓ)₂Te₃ solid solutions(Науково-технологічний комплекс "Інститут монокристалів", 2018) Martynova, K. V.; Rogacheva, E. I.The composition dependences of thermoelectric (TE) properties of (Bi₁₋ₓSbₓ)₂Te₃ solid solutions (0 < x < 1) produced by cold pressing and subsequent annealing were investigated at room temperature. Samples were prepared from cast polycrystals, obtained by the cooling of melt down to room temperature in evacuated quartz ampoules and subsequent annealing. It was established that cast samples exhibited p-type conductivity in the entire composition range, and an increase in the Sb₂Te₃ content led to the growth of electrical conductivity and drop of the Seebeck coefficient. The change of the conductivity type from positive to negative in the composition range x = 0 - 0.6 took place after cold pressing and composition dependencies of the properties became more complex. The maximum figure of merit value (Zmax = (3.1±0.4)·10⁻³ K⁻¹) that was achieved in cold-pressed annealed samples at x = 0.8 was comparable to the values of Z for single crystals of undoped (Bi₁₋ₓSbₓ)₂Te₃ solid solutions and for polycrystalline samples produced by other methods. It follows from the data obtained that the proposed method of preparing the samples of (Bi₁₋ₓSbₓ)₂Te₃ solid solutions by cold pressing and subsequent annealing may appear to be useful in thermoelectric devices.