Кафедри
Постійне посилання на розділhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/35393
Переглянути
10 результатів
Результати пошуку
Документ Technology Bases of Combined Photovoltaic Systems(2023) Zaitsev, Roman; Kirichenko, Mykhailo; Minakova, Kseniia; Khrypunov, Gennadiy; Nikitin, ViktorThis work is subject to copyright. All rights are solely and exclusively licensed by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that may have been made.Документ Automation of Quasi-Closed Space Method Based on ARM Microcontroller(Institute of Electrical and Electronics Engineers, 2016) Zaitsev, R. V.; Kirichenko, M. V.; Prokopenko, D. S.; Zaitseva, L. V.Документ Near Ultraviolet Photodetector Based on Electrodeposited in Pulse Mode Zinc Oxide Arrays(Institute of Electrical and Electronics Engineers, 2016) Klepikova, K. S.; Klochko, N. P.; Kopach, V. R.; Khrypunov, G. S.; Lubov, V. M.; Zaitsev, R. V.; Kirichenko, M. V.Документ Hybrid thermophotoenergy module with thin-film solar cells(Taras Shevchenko National University of Kyiv, 2016) Zaitsev, R. V.; Zaitseva, L. V.; Kirichenko, M. V.Документ Investigation the parameters of multijunction single crystal silicon solar cells with vertical diode cells test samples(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Polezhaeva, O. V.; Zaitsev, R. V.; Kopach, V. R.; Kirichenko, M. V.Документ Attestation of solar cells by back EMF method(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Lobatenko, D. D.; Kirichenko, M. V.; Zaitsev, R. V.; Kopach, V. R.Документ Development and approbation the automatization complex current-voltage characteristics measurement(Institute for Radiophysics and Electronics of the National academy of sciences of Ukraine, 2014) Prokopenko, D. S.; Zaitsev, R. V.; Kirichenko, M. V.Документ Double-layer ITO/Al back surface reflector for single-junction silicon photoconverters(Scientific and Technological Corporation "Institute for Single Crystals", 2008) Kopach, V. R.; Kirichenko, M. V.; Shramko, S. V.; Zaitsev, R. V.It has been shown that to increase the efficiency and manufacturability of single-crystal silicon photovoltaic solar energy converters (Si-PVC) with 180-200 μm thick base crystals having a polished photoreceiving surface and double-layer back surface reflector (BSR) consisting of a transparent oxide and aluminum layers, a conductive transparent indium-tin oxide (ITO) layer of 0.25 μm interference thickness is to be used as the nonmetallic BSR layer. It provides the ITO/Al BSR reflection coefficient in the range of 85 < R < 96 % for solar radiation photoactive component incident the Si-PVC back surface at substantially zero contribution of ITO layer resistance to the device series resistance. In the case of Si-PVC with inverted pyramid type texture of crystal photoreceiving surface at which the specificity of light distribution in the crystal causes total reflection of radiation from Si/ITO interface, the ITO layer thickness should be experimentally optimized in the 1-2 μm range independently of base crystal thickness to minimize the photoactive radiation losses and ITO layer resistance.Документ Влияние длительного хранения и напряжения прямой полярности на КПД пленочных соленчных элементов на основе CdS/CdTe(Наука, 2011) Хрипунов, Геннадий Семенович; Копач, Владимир Романович; Мериуц, Андрей Владимирович; Зайцев, Роман Валентинович; Кириченко, Михаил Валерьевич; Дейнеко, Наталья ВикторовнаЭффект хранения в течение 48 месяцев и субпоследовательное действие напряжения прямой полярности на КПД тонкопленочных солнечных элементов с исходным n⁺ -ITO/n-CdS/p-CdTe/Cu/Au слоистую структуру изучали методами токовольтажные и емкостные характеристики. На основе этих результатов улучшена физическая модель такого типа солнечных батарей деградация клеток под действием указанных факторов. Условия, обеспечивающие частичное восстановление солнечных элементов эффективность после их деградации под действием прямого вытеснения напряжение n−p гетероперехода меньше напряжения холостого хода солнечных батарей определяются экспериментально.Документ High-voltage power take-off system for photovoltaic station(Кременчуцький національний університет ім. Михайла Остроградського, 2016) Zaitsev, R. V.; Kirichenko, M. V.; Khrypunov, G. S.; Prokopenko, D. S.