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Документ The effect of UV and glow-dischare hydrogen plasma irradiation on the crystalline structure and efficiency of CdTe/CdS thin film solar cells prepared by the quasi-closed volume method(Scientific and Technological Corporation "Institute for Single Crystals", 2021) Harchenko, M. M.; Meriuts, A. V.; Nikitin, A. V.; Surovitskiy, S. V.; Dobrozhan, A. I.; Buts, Y. V.It is shown that the crystal structure and photoelectric properties of CdTe/CdS-based solar cells (SCs), fabricated by condensation in a quasi-closed volume, change their characteristics the action of irradiation with a high-dose hydrogen plasma flux.Публікація Growth and structure of thermally evaporated Bi2Te3 thin films(Elsevier, 2016) Rogacheva, E. I.; Budnik, A. V.; Dobrotvorskaya, M. V.; Fedorov, A. G.; Krivonogov, S. I.; Mateychenko, P. V.; Nashchekina, O. N.; Sipatov, A. Yu.The growth mechanism, microstructure, and crystal structure of the polycrystalline nBi2Te3 thin films with thicknesses d = 15 – 350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi2Te3. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5 – 2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi2Te3 thin films of a sufficiently high quality.Документ Flexible thermoelectric module based on zinc oxide thin film grown via SILAR(2021) Klochko, N. P.; Klepikova, K. S.; Khrypunova, I. V.; Zhadan, D. O.; Petrushenko, S. I.; Kopach, V. R.; Dukarov, S. V.; Sukhov, V. M.; Kirichenko, M. V.; Khrypunova, A. L.In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 ◦C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient 147 μV/K and thermoelectric power factor at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m2 at ΔT = 50 K.Публікація Structure of thermally evaporated bismuth selenide thin films(Науково-технологічний комплекс "Інститут монокристалів", 2018) Rogacheva, E. I.; Fedorov, A. G.; Krivonogov, S. I.; Mateychenko, P. V.; Dobrotvorskay, M. V.; Garbuz, A. S.; Nashchekina, O. N.; Sipatov, A. Yu.The Bi₂Se₃ thin films with thicknesses d = 7-420 nm were grown by thermal evaporation in vacuum of stoichiometric n-Bi₂Se₃ crystals onto heated glass substrates under optimal technological conditions determined by the authors. The growth mechanism, microstructure, and crystal structure of the prepared thin films were studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. It was established that the prepared thin films were polycrystalline, with composition close to the stoichiometric one, did not contain any phases apart from Bi₂Se₃, were of a high structural quality, and the preferential growth direction [001] corresponded to the direction of a trigonal axis C₃ in a hexagonal lattice. The films, like the initial crystal, exhibited n-type conductivity. It was shown that with increasing film thickness, the grain size and the film roughness remain practically the same at thicknesses d < 100 nm, and after that increase, reaching their saturation values at d ~ 300 nm. It follows from the results obtained in this work that using the method of thermal evaporation in vacuum from a single source, one can prepare thin n-Bi₂Se₃ films of a sufficiently high structural quality with a composition close to the stoichiometric one and the preferential growth orientation.Документ Електронні фазові переходи і структурна нестабільність у твердих розчинах Bi₁₋ₓSbₓ(Букрек, 2013) Рогачова, Олена Іванівна; Дорошенко, Ганна Миколаївна; Пінегін, В. І.; Дресселхаус, М. С.Проведено рентгенографічне дослідження сплавів Bi1-xSbx в інтервалі концентрацій х = 0 – 0.1. Встановлено, що зі збільшенням концентрації Sb до x ~ 0.02 параметри елементарної комірки (a, c) лінійно зменшуються, а ширина дифракційної лінії збільшується. В інтервалі концентрацій x = 0.025 – 0.1 графіки a(x) і c(x) помітно відрізняються від лінійного закону Вегарда, а максимальні відхилення відповідають складам, за яких наявний перехід у безщілинний стан та інверсія енергетичних зон (x = 0.03 – 0.035) і перехід напівметал-напівпровідник (x = 0.06 – 0.07). У зазначених інтервалах концентрацій, а також в інтервалі х = 0.005 – 0.01, спостерігається зменшення ширини дифракційної лінії. Припускається, що структурна нестабільність, яка відбувається у цих особливих діапазонах концентрації твердих розчинів Bi1-xSbx, пов'язана зі змінами в спектрі електронів за перколяційному переході, переході в безщілинний стан та інверсії зон, і при переході напівметал-напівпровідник.Документ Thermoelectric textile with fibers coated by copper iodide thin films(2020) Klochko, N. P.; Klepikova, K. S.; Zhadan, D. O.; Kopach, V. R.; Chernyavskaya, S. M.; Petrushenko, S. I.; Dukarov, S. V.; Lyubov, V. M.; Khrypunova, A. L.Here we obtained thermoelectric (TE) textiles on the base of the commercial cotton and polyester fabrics. For this we used deposition of copper iodide (CuI) thin films via low-temperature cheap and scalable method Successive Ionic Layer Adsorption and Reaction (SILAR). The TE textiles are comfortable to wear, breathable, nontoxic, light-weight, flexible and air-permeable. The CuI films in the TE textiles are composed of accreted flakes with nanoscale thickness (<50 nm) or of nanowalls. Their crystal grains are less than 50 nm, contain a significant number of dislocations and an increased lattice parameter, and consequently have large compression microstrains. The TE textiles with CuI coated cotton and polyester have the Seebeck coefficients in the range of 120–180 μV K−1, which are constant at the temperatures 290–365 K. The most effective single p-CuI thermoelectric leg has low internal resistance 2 kΩ. Its specific output power at temperature gradient 50 K is 31 μW/m2. Three experimental flexible wearable TEGs of simple and affordable designs having each four thermocouples with n-Alumel and p-CuI thermoelectric legs on the thick cotton, thin cotton and polyester confirm the possibility of obtaining electricity using the developed TE textiles under conditions of temperature gradients from 5 to 50 K at near-room temperatures. The best TEG obtained on the polyester fabric has at temperature difference 50 K output TE characteristics: open circuit voltage 44 mV, short circuit current 1.3 µA, output power 16 nW. These characteristics remain unchanged after repeated bends of TEGs in the different directions.Документ Structure, optical, electrical and thermoelectric properties of solution-processed Li-doped NiO films grown by SILAR(Elsevier Ltd, 2018) Klochko, N. P.; Klepikova, K. S.; Zhadan, D. O.; Petrushenko, S. I.; Kopach, V. R.; Khrypunov, G. S.; Lyubov, V. M.; Dukarov, S. V.; Nikitin, V. O.; Maslak, M. O.; Zakovorotniy, A. Yu.; Khrypunova, A. L.The article presents a new facial synthesis of Li-doped NiO films (NiO:Li) via an easy and cost-effective method Successive Ionic Layer Adsorption and Reaction (SILAR) with the processing of the obtained NiO films in a lithium-containing aqueous solution for their transformation after annealing into NiO:Li layers. Comparative analysis of crystal structure, optical, electrical and thermoelectric properties of the obtained NiO and NiO:Li 420-1050 nm thick films have reveiled a cubic rock-salt NiO structure, at that, NiO:Li samples are nanocrystalline single phased Li-NiO solid solutions. The fabricated NiO and NiO:Li films are p-type semiconductors with activation energy Ea = 0.1 eV and Ea = 0.25‒0.31 eV, respectively. The obtained in-plane Seebeck coefficients Z are in the range 0.20–0.33 mV/К. Notwithstanding the fact that the maximum values of the thermoelectric power factors P=2.2 μW/K2·m, are rather small, they were achieved if the hot end of the NiO:Li film was heated only to 115 °C. Thus, the produced in this work new low cost thermoelectric thin film material is suitable for a production of electrical energy for low-power devices due to absorption of low-potential heat.Документ Crystal Structure of Nanoscale Tin Dioxide Films Produced by Magnetron Sputtering(Kyiv polytechnic institute, 2014) Sokol, Yevgen I. ; Pirohov, O. V.; Klochko, N. P.; Novikov, V. A.; Khrypunov, G. S.; Klepikova, K. S.Investigation of direct current magnetron sputtering parameters effects on the crystal structure of gas sensitive tin dioxide films has revealed that the change in the substrate temperature and in the film thickness leads to the transition from the condensation of metastable conglomerates of amorphous globules to the ≈15 nm SnO₂ crystallites with three-dimensional shape and well-defined edges. The dependence of the SnO₂ structure from the working Ar-O₂ gas mixtures and from their humidity evidences the significant role of the adsorption in the kinetics of the magnetron sputtering of tin dioxide. Due to the adsorption the morphological and dimensional characteristics of the tin dioxide films demonstrate the anomalous stability of the amorphous globules with their enhanced specific surface energy and the stabilization of the amorphous state, selectively retained even after the SnO₂ film reach in general the critical thickness of the crystallization.