Особенности распыления кремниевых и углеродных мишеней ускоренными ионами фуллерена C₆₀

Abstract

We studied patterns of film growth and surface erosion during irradiation of carbon and silicon beam of accelerated ions with energies of C₆₀ in the range of 2,5-24 keV at a temperature of 373 K. targets established that the growth of carbon films on the surface of the irradiated silicon target is observed to energies 7 keV ions and at 19 to the surface of carbon keV. When the ion energy above the specified values on the surface of the film is not formed and there is erosion of the target material. The structure and mechanical properties of carbon films grown in the range of ion energies fullerene 2,5-11,5 keV. Keywords: carbon, silicon, fullerene, erosion, sputtering, ion accelerated C₆₀, film structure.