Growth and crystallization of molybdenum layers on amorphous silicon

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dc.contributor.authorZubarev, Evgeniy N.en
dc.contributor.authorKondratenko, Valeriy V.en
dc.contributor.authorPershyn, Yuriy P.en
dc.contributor.authorSevryukova, Victoriya A.en
dc.date.accessioned2014-03-13T12:48:06Z
dc.date.available2014-03-13T12:48:06Z
dc.date.issued2011
dc.description.abstractThe structure of molybdenum layers deposited by direct current magnetron sputtering onto the amorphous silicon (a-Si) layers as function of nominal layer thickness was studied by methods of transmission electron microscopy. Molybdenum layers with nominal thickness 1.5btMo nomb1.9 nm consist of clusters which should be considered as a transient state between strongly disordered (amorphous) state and crystal one. A transition from clusters to polycrystals takes place within the thickness range of 1.9btMo nomb2.5 nm. Resulting Mo crystallites have an inequiaxial form with dimensions of (3–4)×(15–30)nm2 and consist of blocks. The lateral axis of inequiaxial crystallites is parallel to 110 direction. As the metal layer thickness increases Mocrystallites take the more regular form at the expense of recrystallization.en
dc.identifier.citationGrowth and crystallization of molybdenum layers on amorphous silicon / E. N. Zubarev [et al.] // Thin Solid Films. – 2011. – Vol. 520. – P. 314-319.en
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4746
dc.language.isoen
dc.publisherElsevier Ltden
dc.subjectclusteren
dc.subjectinterfacesen
dc.subjectcrystallizationen
dc.subjecttransmission electron microscopyen
dc.titleGrowth and crystallization of molybdenum layers on amorphous siliconen
dc.typeArticleen

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