Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes
dc.contributor.author | Malykhin, S. V. | en |
dc.contributor.author | Makhlai, V. A. | en |
dc.contributor.author | Surovitskiy, S. V. | en |
dc.contributor.author | Garkusha, I. E. | en |
dc.contributor.author | Herashchenko, S. S. | en |
dc.contributor.author | Kondratenko, V. V. | en |
dc.contributor.author | Kopylets, I. A. | en |
dc.contributor.author | Zubarev, Evgeniy N. | en |
dc.contributor.author | Borisova, S. S. | en |
dc.contributor.author | Fedchenko, A. V. | en |
dc.date.accessioned | 2021-08-11T10:58:37Z | |
dc.date.available | 2021-08-11T10:58:37Z | |
dc.date.issued | 2020 | |
dc.description.abstract | X-ray diffraction and SEM microscopy were used to study the structural and phase changes in a thin film obtained by magnetron sputtering of a Ti52Zr30Ni18 target (at.%) on a steel substrate under the radiation-thermal influence of pulsed hydrogen plasma on an QSPA Kh-50 accelerator. A technique has been worked out for the formation of the quasicrystalline and crystal-approximant phases as a result of high-speed quenching using pulsed action with a heat load of 0.6 MJ/m². The changes in the contents of these phases as well as in their structure and substructure parameters were studied during isothermal vacuum annealing at a temperature of 550 °C and also as a result of irradiation with 5 plasma pulses in the range of heat load from 0.1 to 0.4 MJ/m². The quasicrystalline phase was found to be resistant to irradiation with hydrogen plasma. | en |
dc.identifier.citation | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes / S. V. Malykhin [et al.] // Problems of atomic science and technology. – 2020. – No. 2 (126). – P. 3-8. | en |
dc.identifier.uri | https://repository.kpi.kharkov.ua/handle/KhPI-Press/53858 | |
dc.language.iso | en | |
dc.publisher | Kharkiv Institute of Physics and Technology | en |
dc.subject | radiative-thermal action | en |
dc.subject | thin film | en |
dc.subject | quasicrystalline phase | en |
dc.subject | X-ray diffraction | en |
dc.subject | hydrogen plasma | en |
dc.subject | heat load | en |
dc.title | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes | en |
dc.type | Article | en |
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