Влияние уровня освещенности на выходные параметры солнечных элементов на основе CdS/CdTe

Abstract

The paper discusses issues related to the study of the effect of light levels on the efficiency of solar cells based on CdS/CdTe with the back contacts that contain Cu and which are made without Cu layer. The result of the study have output parameters and light-diode characteristics of solar cells ITO/CdS/CdTe/Cu/Au and ITO/CdS/CdTe/Au at different light levels. For the first time it found that the absence of the copper layer on the back surface efficiency ITO/CdS/CdTe/Cu/Au film solar cell is limited to a level of 3–4 %. In forming the low-resistance tunnel junction Cu/Au efficiency of solar cells based on ITO/CdS/CdTe increases to 10.4 %. Maximum efficiency of laboratory samples of solar cells is fixed at the power of solar radiation of 70 mW/cm2, which corresponds to the power of solar radiation, which is typical for the area of Kharkiv region.