Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers
dc.contributor.author | Pershyn, Yuriy P. | en |
dc.contributor.author | Zubarev, Evgeniy N. | en |
dc.contributor.author | Kondratenko, V. V. | en |
dc.contributor.author | Sevryukova, V. A. | en |
dc.contributor.author | Kurbatova, S. V. | en |
dc.date.accessioned | 2014-03-12T20:11:04Z | |
dc.date.available | 2014-03-12T20:11:04Z | |
dc.date.issued | 2011 | |
dc.description.abstract | Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∼27 nm and barrier layers of CrB20.3- and 0.7-nm thick within the temperature range of 420–780 K were studied by methods of small-angle Xray reflectivity (λ = 0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed | en |
dc.identifier.citation | Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers / Y. P. Pershyn [et al.] // Applied Physics A. – 2011. – No 103. – P. 1021-1031. | en |
dc.identifier.uri | https://repository.kpi.kharkov.ua/handle/KhPI-Press/4715 | |
dc.language.iso | en | |
dc.publisher | Springer | en |
dc.title | Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers | en |
dc.type | Article | en |