Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

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dc.contributor.authorPershyn, Yuriy P.en
dc.contributor.authorZubarev, Evgeniy N.en
dc.contributor.authorKondratenko, V. V.en
dc.contributor.authorSevryukova, V. A.en
dc.contributor.authorKurbatova, S. V.en
dc.date.accessioned2014-03-12T20:11:04Z
dc.date.available2014-03-12T20:11:04Z
dc.date.issued2011
dc.description.abstractProcesses undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∼27 nm and barrier layers of CrB20.3- and 0.7-nm thick within the temperature range of 420–780 K were studied by methods of small-angle Xray reflectivity (λ = 0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discusseden
dc.identifier.citationReactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers / Y. P. Pershyn [et al.] // Applied Physics A. – 2011. – No 103. – P. 1021-1031.en
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4715
dc.language.isoen
dc.publisherSpringeren
dc.titleReactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layersen
dc.typeArticleen

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