Flexible thermoelectric module based on zinc oxide thin film grown via SILAR
dc.contributor.author | Klochko, N. P. | en |
dc.contributor.author | Klepikova, K. S. | en |
dc.contributor.author | Khrypunova, I. V. | en |
dc.contributor.author | Zhadan, D. O. | en |
dc.contributor.author | Petrushenko, S. I. | en |
dc.contributor.author | Kopach, V. R. | en |
dc.contributor.author | Dukarov, S. V. | en |
dc.contributor.author | Sukhov, V. M. | en |
dc.contributor.author | Kirichenko, M. V. | en |
dc.contributor.author | Khrypunova, A. L. | en |
dc.date.accessioned | 2022-10-01T14:51:26Z | |
dc.date.available | 2022-10-01T14:51:26Z | |
dc.date.issued | 2021 | |
dc.description.abstract | In this work, we used the low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) for a deposition of the nanostructured undoped and indium doped (ZnO and ZnO:In) thin films on flexible polyimide (PI) substrates for their use as cheap non-toxic thermoelectric materials in the flexible thermoelectric modules of planar type to power up portable and wearable electronics and miniature devices. The use of a zincate solution in the SILAR method allows to obtain ZnO:In film, which after post-growth annealing at 300 ◦C has low resistivity ρ ≈ 0.02 Ω m, and high Seebeck coefficient 147 μV/K and thermoelectric power factor at near-room temperatures. As evidence of the operability of the manufactured films as the basis of the TE device, we have designed and tested experimental lightweight thin-film thermoelectric module. This TE module is able to produce specific output power 0.8 μW/m2 at ΔT = 50 K. | en |
dc.identifier.citation | Flexible thermoelectric module based on zinc oxide thin film grown via SILAR [Electronic resource] / N. P. Klochko [et al.] // Current Applied Physics. – Electronic text data. – 2021. – No. 21. – P. 121-123. – Access mode: https://www.sciencedirect.com/science/article/abs/pii/S1567173920302443, free (date of the application 01.10.2022.). | en |
dc.identifier.doi | doi.org/10.1016/j.cap.2020.10.012 | |
dc.identifier.orcid | https://orcid.org/0000-0002-4847-506X | |
dc.identifier.uri | https://repository.kpi.kharkov.ua/handle/KhPI-Press/58290 | |
dc.language.iso | en | |
dc.subject | zinc oxide | en |
dc.subject | crystal structure | en |
dc.subject | thermoelectric module | en |
dc.subject | chemical reactions | en |
dc.subject | flexible polyimide | en |
dc.title | Flexible thermoelectric module based on zinc oxide thin film grown via SILAR | en |
dc.type | Article | en |
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