Электромагнитная совместимость полупроводниковых приборов технических средств в условиях воздействия внешнего электромагнитного излучения

Abstract

In the work is proposed a physical model ofadvent of reversible failures of semiconductor diodes (of influence of currents induced by electromagnetic radiation (EMR) on volt-ampere characteristics of devices). This model is based on the mechanism of transformation of energy induced by external EMR currents into energy of natural electromagnetic oscillations of solid-state component radio articles (effect of transient radiation). Statement of experimental investigations on the basis of the proposed physical model of reversible processes (advent of areas of volt-ampere characteristics of semiconductor diodes withnegative resistance) was substantiated. Areas of parameters of external electromagnetic radiation and semiconductor devices, for those this physical model is realized, are determined. Experimental investigations of influence of pulsed electromagnetic radiation on volt-ampere characteristics of sections of forward current of diodes were conducted. They showed presence of sections with negative differential resistance characterizing the mode of generation of natural oscillations (increase of forward current with decrease of voltage). The results of comparative analysis of experimental and calculated data obtained in this work allow using this the proposed physical model of reversible failures, and calculation relations obtained on its basis can serve as a basis for determination of criteria of advent and quantitative characteristics of reversible failures of semiconductor diodes in conditions whenthey are under action of pulsed electromagnetic radiation.