Investigation of thin film solar cells on CdS/CdTe base with different back contacts
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Дата
2010
ORCID
DOI
Науковий ступінь
Рівень дисертації
Шифр та назва спеціальності
Рада захисту
Установа захисту
Науковий керівник
Члени комітету
Видавець
Trans Tech Publications, Switzerland
Анотація
The peculiarities of photo-electric processes in thin film CdS/CdTe solar cells (SC) with different back electrodes (Cu/Au, ITO, Cu/ITO) havebeen studied. As it was established by capacitance – voltage (C-V) characteristics, the potential barrier heights for CdTe/Cu/Au and CdTe/ITO were 0.3 eV and 2.2 eV, respectively. The concentrations of charge carriers near back contact consisted 9⋅10²⁰ m⁻³ and 2⋅10²¹ m⁻³, respectively. A high carrier concentration and hi gh potential barrier of the ITO back contact caused the tunnel – recombination mechanism of the charge transport. The investigations of CdS/CdTe/ITO SC spectral photosensitivity testify a negative impact of the developed grain-boundary surface of the base layer on the processes of diffusion and separation of non-equilibrium currentcarriers generated by short-wave radiation. It is shown that the deposition of Cu nanolayer before the deposition of ITO films give stable efficiency 10% for bifacial CdS/CdTe solar cells.
Опис
Ключові слова
solar cell, thin film, photo-electric processes, back contact
Бібліографічний опис
Investigation of thin film solar cells on CdS/CdTe base with different back contacts / G. Khrypunov [et al.] // Advances in Science and Technology. – 2010. – Vol. 74. – Proc. of the 5-th Forum on New Materials (CIMTEC–2010), 13-18 June 2010. Pt. C : Photovoltaic Solar Energy Conversion / ed. P. Vincenzini [et al.]. – Italy : Montecatini Terme, 2010. – P. 119-123.