Structure, thermal stability and reflectivity of Sc/Si and Sc/W/Si/W multilayer X-ray mirrors

dc.contributor.authorVinogradov, A. V.en
dc.contributor.authorPershin, Yu. P.en
dc.contributor.authorZubarev, Evgeniy N.en
dc.contributor.authorVoronov, D. L.en
dc.contributor.authorPen’kov, A. V.en
dc.contributor.authorKondratenko, V. V.en
dc.contributor.authorUspenskii, Yu. A.en
dc.contributor.authorArtioukov, I. A.en
dc.contributor.authorSeely, J. F.en
dc.date.accessioned2022-06-27T15:25:05Z
dc.date.available2022-06-27T15:25:05Z
dc.date.issued2001
dc.description.abstractProcesses going on at elevated temperatures between Sc and Si layers in Sc/Si coatings are studied by X-ray scattering and cross-sectional transmission electron microscopy. It is shown that the W layers of 0.5-0.8nm placed at Sc-Si interfaces form effective barriers preventing the penetration of Si into Sc. The effects of Si-Sc diffusion and W-barriers on the reflectivity of coatings are calculated in good agreement with experimental results. Presented measurements show that the Sc/W/Si/W multilayers with the period of 20.5 nm fabricated by dc-magnetron sputtering possess thermal stability up to 250 C and the normal incidence reflectivity of 24% at wavelengths about 40 nm.en
dc.identifier.citationStructure, thermal stability and reflectivity of Sc/Si and Sc/W/Si/W multilayer X-ray mirrors / A. V. Vinogradov [et al.] // Soft X-Ray Lasers and Applications IV : Proc. SPIE. – San-Diego, CA (USA), 2001. – Vol. 4505. – P. 230-235.en
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/57492
dc.language.isoen
dc.publisherSPIEen
dc.subjectEUV opticsen
dc.subjectmultilayeren
dc.subjectthermal stabilityen
dc.subjectоптикаuk
dc.subjectтермостабільністьuk
dc.subjectбагатошарові рентгенівські дзеркалаuk
dc.titleStructure, thermal stability and reflectivity of Sc/Si and Sc/W/Si/W multilayer X-ray mirrorsen
dc.typeArticleen

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