Adopting of DC Magnetron Sputtering Method For Preparing Semiconductor Films

Ескіз

Дата

2017

ORCID

DOI

Науковий ступінь

Рівень дисертації

Шифр та назва спеціальності

Рада захисту

Установа захисту

Науковий керівник

Члени комітету

Назва журналу

Номер ISSN

Назва тому

Видавець

Institute of Electrical and Electronics Engineers

Анотація

It has been carried out the experimental studies of the process of cadmium telluride magnetron sputtering with direct current, and the impact of a magnetron sputtering mode on CdTe films crystalline structure. In order to create thin-film solar cells based on cadmium sulfide and telluride CdTe films for the base layers of thin film solar cells was obtained on flexible polyimide substrates by magnetron sputtering with direct current for the first time. It has found that increasing the magnetron discharge current up to 80 mA leads to increase in coherent scattering regions what is due to an increase in the thickness of the cadmium telluride films of the hexagonal modification having a columnar structure.

Опис

Ключові слова

flexible solar cells based on cadmium sulfide and telluride, flexible solar cells based on cadmium sulfide and telluride, method of magnetron sputtering with direct current, thermoelectronic emission, target

Бібліографічний опис

Adopting of DC Magnetron Sputtering Method For Preparing Semiconductor Films / M. V. Kirichenko [et al.] // Applied Physics and Engineering (YSF-2017): proc. of the 2017 IEEE Intern. Young Scientists Forum, 17-20 October 2017, Lviv, Ukraine. – Lviv, 2017. – P. 108-111.

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