The influence of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayers

Скорочена інформація про документ
dc.contributor.authorPershyn, Yuriy P.en
dc.contributor.authorGullikson, E. M.en
dc.contributor.authorArtyukov, I. A.en
dc.contributor.authorKondratenko, V. V.en
dc.contributor.authorSevryukova, V. A.en
dc.contributor.authorVoronov, D. L.en
dc.contributor.authorZubarev, Evgeniy N.en
dc.contributor.authorVinogradov, A. V.en
dc.date.accessioned2014-03-12T20:34:25Z
dc.date.available2014-03-12T20:34:25Z
dc.date.issued2011
dc.description.abstractImpact of Ar gas pressure (1−4 mTorr) on the growth of amorphous interlayers in Mo/Si multilayers deposited by magnetron sputtering was investigated by small-angle x-ray scattering (l=0.154 nm) and methods of cross-sectional transmission electron microscopy. Some reduction of thickness of the amorphous inter-layers with Ar pressure increase was found, while composition of the layers was enriched with molybdenum. The interface modification resulted in raise of EUV reflectance of the Mo/Si multilayersen
dc.identifier.citationThe influence of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayers / Y. P. Pershyn [et al.] // SPIE. – 2011. – Vol. 8139m. – P. 0N1-0N11.en
dc.identifier.urihttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4716
dc.language.isoen
dc.publisherAmerican Institute of Physicsen
dc.subjectmultilayer X-ray mirroren
dc.subjectinterlayer compositionen
dc.subjectpressure variationen
dc.subjectmagnetron sputteringen
dc.titleThe influence of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayersen
dc.typeArticleen

Файли

Контейнер файлів
Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
2011_Pershyn_The_influence.pdf
Розмір:
154.91 KB
Формат:
Adobe Portable Document Format
Завантажити
Ліцензійна угода
Зараз показуємо 1 - 1 з 1
Ескіз недоступний
Назва:
license.txt
Розмір:
6.73 KB
Формат:
Item-specific license agreed upon to submission
Опис:
Завантажити

Зібрання

Кафедра "Фізика металів і напівпровідників"