Кафедра "Комп'ютерна інженерія та програмування"
Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/1095
Офіційний сайт кафедри https://web.kpi.kharkov.ua/cep
Від 26 листопада 2021 року кафедра має назву – "Комп’ютерна інженерія та програмування"; попередні назви – “Обчислювальна техніка та програмування”, “Електронні обчислювальні машини”, первісна назва – кафедра “Математичні та лічильно-вирішальні прилади та пристрої”.
Кафедра “Математичні та лічильно-вирішальні прилади та пристрої” заснована 1 вересня 1961 року. Організатором та її першим завідувачем був професор Віктор Георгійович Васильєв.
Кафедра входить до складу Навчально-наукового інституту комп'ютерних наук та інформаційних технологій Національного технічного університету "Харківський політехнічний інститут". Перший випуск – 24 інженери, підготовлених кафедрою, відбувся в 1964 році. З тих пір кафедрою підготовлено понад 4 тисячі фахівців, зокрема близько 500 для 50 країн світу.
У складі науково-педагогічного колективу кафедри працюють: 11 докторів технічних наук, 21 кандидат технічних наук, 1 – економічних, 1 – фізико-математичних, 1 – педагогічних, 1 доктор філософії; 9 співробітників мають звання професора, 14 – доцента, 2 – старшого наукового співробітника.
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Документ Excitation of magnetoplasma oscillations in semiconductor structures by fluxes of charged particles(Національний технічний університет "Харківський політехнічний інститут", 2021) Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, Igor; Fomenko, AndriiThe subject of the papers is the processes of analysis and physical model of excitation (amplification) of magnetoplasma oscillations (helicons) by fluxes of charged particles (electrons) in the presence of a constant magnetic field. This model is based on the Cherenkov mechanism for converting kinetic energy of particles into the energy of natural electromagnetic oscillations of solid-state (semiconductor) structures under resonance conditions when the particle velocities coincide with phase velocities of oscillations. The aim here is to justify the formulation of theoretical studies basing on the proposed physical model of generation (amplification) of electromagnetic oscillations (emergence of oscillation instabilities, i.e., exponential growth of their amplitude). We define parameters intervals for the external magnetic field, particle fluxes and types of semiconductor structures which this physical model is applied to. We perform theoretical study of the influence charged particle fluxes have on waveguide characteristics of semiconductor structures. The study justifies the possibility of generation and amplification of magnetoplasma oscillations in the submillimeter range. Our objectives are theoretical studies of the interaction of moving charges with electromagnetic oscillations of a semiconductor structure under conditions of Cherenkov radiation. The methods used are the method of successive approximations for solving the dispersion equations for a system of charged particle flux - semiconductor structure within the framework of hydrodynamic approach. The following results are obtained: Theoretical studies of the functioning of semiconductor components of electrical radio equipment in the presence of charged particle fluxes have been carried out. It is shown that the effect of the particle flux is characterized by the emergence of oscillation instabilities in the semiconductor structure. We have determined one of the mechanisms for the excitation of magnetoplasma oscillations based on the interaction of moving charges with the intrinsic fields of the structures that constitute a semiconductor unit. Such equipment failures occur under conditions of Cherenkov radiation. We have shown that this interaction leads to appearance of a mode of oscillation generation. The results of a comparative analysis of the data obtained in this work make it possible to use the proposed physical model to determine the criteria for the occurrence and development of instabilities of magnetoplasma oscillations. Conclusions. The results obtained in this work can be used in the development of active microwave range devices (amplifiers, generators and transducers of electromagnetic oscillations of the millimeter and submillimeter bands). The comparative analysis of quantitative estimates of the growth rates of oscillation instabilities, depending on the spatial configuration of the acting field (when induced current is parallel to the structure boundary), carried out in this work, provides a solution to the problem of optimizing the operating characteristics of active microwave devices.Документ Electromagnetic compatibility of semiconductor structures with a two-dimensional electron layer(Національний технічний університет "Харківський політехнічний інститут", 2019) Kravchenko, Volodymyr; Knyazev, Volodymyr; Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, IgorThe subject matter is the mechanisms of interaction of the flow of charged particles with the surface plasmons of a two-dimensional electron layer (2D) due to the action of external pulsed electromagnetic radiation (EMP).The aim is obtaining design relations that determine to what degree the instabilities of natural vibrationsof a two-dimensional electronic layer of a semiconductor structure may influence the performance of semiconductor devices. The objectives area model of occurrence of reversible failures of radio products arising from the transformation of energy of currents induced by external pulsed radiation to excite electrostatic oscillations of a two-dimensional electronic layer of semiconductor structures. The methodsused areanalytical methods for solving electrodynamics (Maxwell) equations and material equations in the framework of kinetic approach. The following resultshave been obtained: The mechanisms of interaction of the flow of charged particles with the natural electromagnetic vibrations of a two-dimensional electron gas occurring due to the presence of a potential barrier at the interface have been studied. Investigations of functioning of semiconductor components of radio products (structures with two-dimensional electron gas) under the influence of strong pulsed electromagnetic fields have been carried out. A kinetic equation describing the change in thenumber of electromagnetic oscillations of such a system has been obtained. The solution of the equation has been found, which allows determining the influence of the barrier on the instability increment of surface vibrations as well as the contributions of the transmitted and reflected components of the particle flux to the increment. Equations for the increment of instabilitie sallow us to determine the energy loss of the induced currents on the excitation of natural oscillations i.e. the emergence of a mode of oscillation generation, which is characterized by a change in the volt-ampere characteristics of radio devices. Conclusion. A comparative analysis of the instabilities of vibrations of structures with a two-dimensional electron gas has been carried out under conditions when the interaction of waves and particles is randomand deterministic. It is shown that the differences in the expressions for increments are associated with a change in the size of the region of interaction of waves and particles. Differences in the influence of the potential barrier on the increment are established in cases where the interaction of surface plasmons and charged particles is determined or has the character of random collisions. The mechanisms of the influence of the boundary on the interaction of surface electromagnetic waves and electrons in the presence of a potential barrier are determined. I ntrinsic electromagnetic oscillations of a two-dimensional electron layer are taken as research objects. The results obtained in the work can be used to assess the operability of electronic equipment in millimeter and submillimeter ranges under the influence of pulsed electromagnetic fields.Документ Electromagnetic compatibility of semiconductor devices exposed to transitionradiation(Національний технічний університет "Харківський політехнічний інститут", 2019) Knyazev, Volodymyr; Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, IgorThe subject of the paper is an analysis and a physical model of the occurrence of reversible failures in semiconductor diodes (when current-voltage characteristics of the devices are influenced by electromagnetic radiation (EMR)). The model is based on the mechanism with which the energy of currents induced by external EMR is converted into the energy of natural electromagnetic oscillations of solid-state components of radio units (transition radiationeffect).The aim of the paper is to justify experimental studies on the basis of the proposed physical model of reversible failures (occurrence of negative resistance sections in current-voltage curve of semiconductor diodes). We determined external electromagnetic radiation and semiconductor device parameter ranges with which this physical modelcan be applied. We conductedsome experiments to study the influence of pulsed electromagnetic radiation on the current-voltage characteristics of direct current diode sections. The experiments justified the presence of areas with negative differential resistance characteristic for the natural oscillation generation mode (an increase in forward current when the voltage drops).Our objectives are to perform experimental study of interactions betweenthe currents induced by external EMR and electrostatic oscillations of a semiconductor structure. Such interactionsresults from conversion of energy of moving charges (induced currents) into energy of electromagnetic oscillations under conditions of transition radiation when the particle flux goes along the normal to asemiconductor structure boundary. The methodsused areanalytical methods, i.e.solving Maxwell's equations and medium equations in the framework of the hydrodynamic approach. The followingresults wereobtained. Experimental studies of behavior of semiconductor components of electrical radio units exposed to strong pulsed electromagnetic fields have been carried out. The nature of changes in the performance of semiconductor components has been studied. It has been shown that the impactof pulsed electromagnetic radiation is accompanied by currents in the conductive elements of the units. We define here a certain type of reversible failures of semiconductor radio units. Failures of this type occur due to interaction between the external radiation inducedcurrents and own fields of radio equipment components. Such failures occurs in presence of transition radiation (when the current is directed along the normal to the boundary of the unit). Wearguethat suchinteractionslead to energy losses ininduced currents due to excitation of natural oscillations in the units, i.e. the units enters an oscillation generation mode, which is characterized by a change in the current-voltagecharacteristics of radio devices. With the results of comparative analysis of the experimental and calculated data obtained in this work,it is possible to use the proposed physical model of reversible failures and calculated derived relationships to determine criteria of occurrence and quantitative characteristics of reversible failures insemiconductor diodes exposed topulsed electromagnetic radiation (occurrence of S-shaped sections of direct current). Conclusion.The results obtained can be used to assess electromagnetic compatibility of active electronic devices (millimeter/submillimeter amplifiers, generators and transducers of electromagnetic oscillations) exposed toexternal pulsed electromagnetic fields. A comparative analysis of quantitative estimates of reversible failures of semiconductor devices depending on the spatial configuration of the affectingfield (the induced current is normal to the structure boundary) allows us to solve the problem of optimizing the degree of distortion inthe perating characteristics of these devices.