Кафедра "Комп'ютерна інженерія та програмування"
Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/1095
Офіційний сайт кафедри https://web.kpi.kharkov.ua/cep
Від 26 листопада 2021 року кафедра має назву – "Комп’ютерна інженерія та програмування"; попередні назви – “Обчислювальна техніка та програмування”, “Електронні обчислювальні машини”, первісна назва – кафедра “Математичні та лічильно-вирішальні прилади та пристрої”.
Кафедра “Математичні та лічильно-вирішальні прилади та пристрої” заснована 1 вересня 1961 року. Організатором та її першим завідувачем був професор Віктор Георгійович Васильєв.
Кафедра входить до складу Навчально-наукового інституту комп'ютерних наук та інформаційних технологій Національного технічного університету "Харківський політехнічний інститут". Перший випуск – 24 інженери, підготовлених кафедрою, відбувся в 1964 році. З тих пір кафедрою підготовлено понад 4 тисячі фахівців, зокрема близько 500 для 50 країн світу.
У складі науково-педагогічного колективу кафедри працюють: 11 докторів технічних наук, 21 кандидат технічних наук, 1 – економічних, 1 – фізико-математичних, 1 – педагогічних, 1 доктор філософії; 9 співробітників мають звання професора, 14 – доцента, 2 – старшого наукового співробітника.
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Документ Excitation of own oscillations in semiconductor components of radio products under the exposure of third-party electromagnetic radiation(Національний технічний університет "Харківський політехнічний інститут", 2022) Serkov, Aleksandr; Breslavets, Vitalii; Breslavets, Juliya; Yakovenko, IgorThe subject matter is the processes of analysis and mechanisms of interaction of EMP-induced currents and voltages with the processes characterizing the functional purpose of radio products, is usually carried out within the framework of the theory of distributed circuits. The presented approach makes it possible to evaluate the performance criteria in general (for example, to evaluate the critical energy characterizing a thermal breakdown), however, issues related to the determination of various types of electromagnetic interactions that occur directly in the components of a product under the influence of EMR remain open. The aim is the possibility of setting up theoretical and experimental studies based on the proposed calculation model for excitation of natural vibrations of a semiconductor structure (exponential growth of amplitude). The parameters of a third-party pulsed electromagnetic field, induced currents and characteristics of semiconductor devices have been established within which the regime of amplification of natural vibrations of a semiconductor structure is observed. The objectives are: mechanisms of interaction of induced currents with surface vibrations of semiconductor components of a radio product under the influence of pulsed electromagnetic radiation. The methods used are: methods of the theory of small perturbations in determining the spectrum of natural oscillations of the system - currents induced by electromagnetic radiation and natural oscillations of the components of the radio product. The following results are obtained: The mechanisms for the appearance of reversible failures of semiconductor components of radio products under the influence of third-party pulsed electromagnetic fields are determined. It has been established that the presence of a current induced by external radiation leads to the establishment of a mode of amplification of natural oscillations of semiconductor components of a radio product (reversible failures). Conclusion. Quantitative estimates of amplification (generation) modes of oscillations of semiconductor devices, distorting their performance depending on the parameters of external electromagnetic influence, allows developing mechanisms for electromagnetic compatibility of microwave radio products. A comparative analysis of the calculated data obtained in the work can be used in the manufacture of radio devices operating in the millimeter and submillimeter range (amplifiers, generators and frequency converters).Документ Electromagnetic compatibility of semiconductor devices exposed to transitionradiation(Національний технічний університет "Харківський політехнічний інститут", 2019) Knyazev, Volodymyr; Serkov, Aleksandr; Breslavets, Vitaliy; Yakovenko, IgorThe subject of the paper is an analysis and a physical model of the occurrence of reversible failures in semiconductor diodes (when current-voltage characteristics of the devices are influenced by electromagnetic radiation (EMR)). The model is based on the mechanism with which the energy of currents induced by external EMR is converted into the energy of natural electromagnetic oscillations of solid-state components of radio units (transition radiationeffect).The aim of the paper is to justify experimental studies on the basis of the proposed physical model of reversible failures (occurrence of negative resistance sections in current-voltage curve of semiconductor diodes). We determined external electromagnetic radiation and semiconductor device parameter ranges with which this physical modelcan be applied. We conductedsome experiments to study the influence of pulsed electromagnetic radiation on the current-voltage characteristics of direct current diode sections. The experiments justified the presence of areas with negative differential resistance characteristic for the natural oscillation generation mode (an increase in forward current when the voltage drops).Our objectives are to perform experimental study of interactions betweenthe currents induced by external EMR and electrostatic oscillations of a semiconductor structure. Such interactionsresults from conversion of energy of moving charges (induced currents) into energy of electromagnetic oscillations under conditions of transition radiation when the particle flux goes along the normal to asemiconductor structure boundary. The methodsused areanalytical methods, i.e.solving Maxwell's equations and medium equations in the framework of the hydrodynamic approach. The followingresults wereobtained. Experimental studies of behavior of semiconductor components of electrical radio units exposed to strong pulsed electromagnetic fields have been carried out. The nature of changes in the performance of semiconductor components has been studied. It has been shown that the impactof pulsed electromagnetic radiation is accompanied by currents in the conductive elements of the units. We define here a certain type of reversible failures of semiconductor radio units. Failures of this type occur due to interaction between the external radiation inducedcurrents and own fields of radio equipment components. Such failures occurs in presence of transition radiation (when the current is directed along the normal to the boundary of the unit). Wearguethat suchinteractionslead to energy losses ininduced currents due to excitation of natural oscillations in the units, i.e. the units enters an oscillation generation mode, which is characterized by a change in the current-voltagecharacteristics of radio devices. With the results of comparative analysis of the experimental and calculated data obtained in this work,it is possible to use the proposed physical model of reversible failures and calculated derived relationships to determine criteria of occurrence and quantitative characteristics of reversible failures insemiconductor diodes exposed topulsed electromagnetic radiation (occurrence of S-shaped sections of direct current). Conclusion.The results obtained can be used to assess electromagnetic compatibility of active electronic devices (millimeter/submillimeter amplifiers, generators and transducers of electromagnetic oscillations) exposed toexternal pulsed electromagnetic fields. A comparative analysis of quantitative estimates of reversible failures of semiconductor devices depending on the spatial configuration of the affectingfield (the induced current is normal to the structure boundary) allows us to solve the problem of optimizing the degree of distortion inthe perating characteristics of these devices.Документ Extraneous electromagnetic radiation impact on waveguide characteristics of a semiconductor superlattice(НТУ "ХПІ", 2018) Kravchenko, Volodymyr; Breslavets, Vitaliy; Yakovenko, Igor; Hui, Qiu JingThe subject matter is the mechanisms of emergence of instabilities in natural oscillations of semiconductor supertattices caused by their interaction with charged particle flows of extraneous electromagnetic radiation. The aimis calculating ratios to determine a degree of deviation of operating characteristics of semiconductor components from the norm, depending on the parameters of extraneous pulsed electromagnetic radiation. The objectiveis to model how currents that are induced with extraneous EMR interact with electrostatic oscillations of a semiconductor supertattice, using an implementation of (Cherenkov) resonance interaction of moving charges with electromagnetic oscillations under conditions where the phase velocity of the wave and the velocity of the charged particle are the same. The methods used: analytical methods for solving Maxwell's equations and medium equations in a framework of hydrodynamic approach. The following results are obtained. We have studied semiconductor components of electronic equipment (supertattices) being exposed to strong pulsed electromagnetic fields. The study was focused on the nature of changes in the working capacity of the components. We show that the effect of pulsed electromagnetic radiation is accompanied by an emergence of currents in the conductive hardware elements and an emergence of internal fields within them. One kind of reversible failures of semiconductor hardware elements is determined, based on interaction of extraneous radiation induced currents with the intrinsic fields of the supertattices of the hardware components. Similar failures occur under conditions of Cerenkov radiation (when the current is parallel to the structure boundary). It is shown that such interaction leads to energy losses in the induced currents spent to excitation of natural oscillations of the supertattice, i.e. to emergence of an oscillation generation mode that is characterized with a change in the volt-ampere characteristics of the hardware. The results obtained in this work can be used to evaluate the efficiency of active radio electronic devices (amplifiers, generators and converters of electromagnetic oscillations in the millimeter and sub-millimeter ranges) being exposed to extraneous pulsed electromagnetic fields. The comparative analysis of quantitative evaluations of reversible failures of semiconductor devices in dependence on the spatial configuration of the acting field (induced current parallel to the structure boundary) allows solving problems in optimizing the degree of distortion of the performance characteristics of these devices.