Кафедра "Фізика"

Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/7578

Офіційний сайт кафедри http://web.kpi.kharkov.ua/tef

Кафедра "Фізика" створена у 2016 році шляхом об'єднання кафедри "Загальна та експериментальна фізика" і кафедри "Теоретична та експериментальна фізика", заснованої в 1972 році. .

У 1885 р. для викладання в інституті курсу фізики на посаду ад’юнкт-професора був запрошений магістр фізики приват-доцент Харківського університету Олександр Костянтинович Погорілко. У різні роки на кафедрі працювали видатні вчені-фізики: Пільчиков Н. Д., Латишев Г. Д., Обреїмов І. В., Пінес Б. Я., Ландау Л. Д., Корсунський М. І., Веркин Б. І., Дмитренко І. М., Базакуца В. А., Кулик І. О., Янсон І. К., Басс Ф. Г. Гуревич Ю. Г., Косевич В. М., Кукушкін Л. С. та ін.

Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут".

У складі науково-педагогічного колективу кафедри працюють: 2 доктора та 16 кандидатів фізико-математичних наук, 2 кандидата технічних наук, 1 кандидат педагогічних наук; 2 співробітника мають звання професора, 12 – доцента.

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2005 - 200912010 - 20165

Налаштування

Автор: search.filters.author.Dresselhaus, M. S.

Результати пошуку

Зараз показуємо 1 - 6 з 6
  • Ескіз
    Публікація
    Influence of Composition on the Thermoelectric Properties of Bi1-xSbx Thin Films
    (IOP Publishing Ltd, 2016) Rogacheva, E. I.; Nashchekina, O. N.; Doroshenko, A. N.; Sipatov, A. Yu.; Dresselhaus, M. S.
  • Ескіз
    Публікація
    Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films
    (IOP Publishing Ltd, 2016) Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.
  • Ескіз
    Публікація
    Peculiarities of concentration dependences of thermal conductivity in (PbTe)₁₋ₓ (Bi₂Te₃)ₓ semiconductor solid solutions
    (Інститут термоелектрики НАН України, 2014) Rogacheva, E. I.; Vodorez, O. S.; Nashchekina, O. N.; Dresselhaus, M. S.
    For the semiconductor (PbTe)₁₋ₓ (Bi₂Te₃)ₓ solid solutions, the temperature (T = 250 – 670 K) and concentration (x = 0 – 0.07) dependences of the total λ and lattice λp thermal conductivities were obtained. It was established that the dependences λ(x), λp(x) and β(x) (where β is the exponent in the λp ~ T⁻ᵝ dependence) have a non-monotonic dependence on x in this range of x. While showing a general tendency to decrease with increasing x, the three variables λ, λp, and β exhibit maxima at x = 0.005, 0.015 and x = 0.03. The oscillatory character of these dependences is attributable to the changes in thermal transfer processes and the mechanisms of phonon scattering under transitions from the dilute to the concentrated and associated solid solutions, with the transitions due to spatial ordering processes. The effective cross-section σs for phonon scattering by impurity atoms was estimated on the basis of the experimental data and theoretical calculations in accordance with the Klemens theory. The mean σs value in the homogeneity region of PbTe (x = 0 – 0.05) found experimentally coincides with the theoretically calculated σs value. However, in the region of the dilute solid solutions (x < 0.005), the σs value considerably exceeds the mean σs value. Also long-term aging reduces λ by ~ 15%.
  • Ескіз
    Документ
    Investigation of the growth mechanism, structure, and thermoelectric properties of thin PbTe films grown on mica
    (Науково-технологічний комплекс "Інститут монокристалів", 2005) Rogacheva, E. I.; Grigorov, S. N.; Lyubchenko, S. G.; Sipatov, A. Yu.; Volobuev, V. V.; Dresselhaus, M. S.
    The growth mechanisms, structure, and thermoelectric properties of thin PbTe films prepared by thermal evaporation in vacuum and subsequent deposition on mica substrates at temperatures Ts = 375, 525 and 635 K were studied. The films were prepared from charge with different electron concentrations (n = 10¹⁷ and n = 10²⁰ cmˉ³). The film thickness was varied in the range d = 4-500 nm. Electron microscopy study showed that PbTe grows on mica epitaxially in an island like fashion predominantly in the (111) orientation. It is established that in PbTe films there exists a critical thickness at which the transition from electron to hole conductivity with decreasing d is observed. Covering films with a protective layer, lowering the substrate temperature and increasing electron concentration in the charge result in narrowing of the thickness range corresponding to hole conductivity. It is shown that electron concentrations n in the charge and in thick PbTe films grown at the substrate temperature Ts = 525 K differ, the character and magnitude of this difference depending on n in the charge.
  • Ескіз
    Публікація
    Quantum Size Effects and Transport Phenomena in PbSe Quantum Wells and PbSe/EuS Superlattices
    (AIP Publishing LLC, 2013) Rogacheva, E. I.; Nashchekina, O. N.; Olkhovskaya, S. I.; Sipatov, A. Yu.; Dresselhaus, M. S.
    It is established that the room-temperature dependences of transport properties on the total thickness of PbSe layers d in PbSe/EuS superlattices exhibit an oscillatory behavior. It is shown that the oscillation period Δd practically coincides with the period of the thickness oscillations observed earlier in single PbSe/EuS quantum well. The non-monotonic character of these dependences is attributed to quantum size effects. The theoretically estimated and experimentally determined Δd values are in good agreement.
  • Ескіз
    Публікація
    Size effects in thin PbSe films
    (Institute of Thermoelectricity, 2012) Rogacheva, E. I.; Nashchekina, O. N.; Olkhovskaya, S. I.; Dresselhaus, M. S.
    The objects of the study are thin PbSe films with thicknesses d in the range of d = 5.5 – 410 nm, grown by thermal evaporation in vacuum of stoichiometric p-PbSe crystals on KCl substrates and covered with a EuSe layer. The room-temperature d-dependences of the Seebeck coefficient, Hall coefficient, electrical conductivity, charge carrier mobility, thermoelectric power factor are obtained. When d increases to ~ 20 nm, an inversion of the conductivity sign from p to n is observed. In the d-dependences of the transport properties one can isolate a monotonic and oscillatory components, whose presence is attributed to the manifestation of classical and quantum size effects, respectively. The oscillation periods Δd for electronic and hole gases are determined. Theoretically calculated Δd, assuming a size quantization of the electronic and hole spectra, and our estimate of the monotonic component of the electrical conductivity, using the Fuchs-Sondheimer theory, are in good agreement with the experimental data.