Кафедра "Фізика металів і напівпровідників"
Постійне посилання колекціїhttps://repository.kpi.kharkov.ua/handle/KhPI-Press/4703
Офіційний сайт кафедри http://web.kpi.kharkov.ua/fmp
Від 2002 року кафедра має назву "Фізика металів і напівпровідників", попередня назва – кафедра металофізики.
Кафедра металофізики організована в 1930 році у складі фізико-механічного факультету ХММІ. Деканом факультету був у ті роки видатний вчений-фізик, академік Іван Васильович Обреїмов.
Кафедра входить до складу Навчально-наукового інституту комп'ютерного моделювання, прикладної фізики та математики Національного технічного університету "Харківський політехнічний інститут". За час існування кафедрою підготовлено близько 3000 інженерів, у тому числі і для зарубіжних країн.
У складі науково-педагогічного колективу кафедри працюють: 3 доктора та 2 кандидата фізико-математичних наук; 3 співробітника мають звання професора.
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Документ Effect of aging on thermoelectric properties of the Bi2Te3 polycrystals and thin films(Науково-технологічний комплекс "Інститут монокристалів", 2021) Rogacheva, E. I.; Doroshenko, A. N.; Novak, K. V.; Sipatov, A. Yu.; Khramova, T. I.; Saenko, S. A.The temperature dependences (77-300 K) of the thermoelectric (TE) properties (the Seebeck coefficient S, electrical conductivity σ, Hall coefficient RH, Hall charge mobility μH>, and TE power factor P) were studied for freshly prepared and for exposed to air at room temperature during 5 years p-Bi2Te3 (60.0 at.% Te) and n-Bi2Te3 (62.8 at.% Te) polycrystals and thin films grown from them by thermal evaporation in vacuum. It was found that after aging, in the p- and n-Bi2Te3 bulk crystals and in the n-type film obtained from the n-Bi2Te3 crystal, type of conductivity is reserved but the p-type film obtained from the p-Bi2Te3 crystal, change the type of conductivity from hole to electronic. The activation energies of possible defect states were determined using the RH(T) dependences. After aging, at the temperatures close to room temperature, the p values of n-Bi2Te3 and p-Bi2Te3 polycrystals decreases by ~ 20 %, but p values of the n-type film grown from n-Bi2Te3 crystal increases by 20-30 %. In the p-type film obtained from p-Bi2Te3 polycrystal, and having changed the type of conductivity after aging, the p values exceed the p values of a film obtained from n-Bi2Te3 polycrystal by ~ 35 % at 250 K and by 25 % at 300 K, remaining at these temperatures below the p values for n-Bi2Te3 polycrystal after aging by ~ 15 %.Документ Growth and Structural Characterization of Thermally Evaporated Topological Insulator Bi2Se3 Thin Films(NanoCOFC, 2018) Rogachova, E. I.; Fedorov, A. G.; Krivonogov, S. I.; Mateychenko, P. V.; Dobrotvorskaya, M. V.; Garbuz, Alexander G.; Sipatov, A. Yu.Документ Кінетичні властивості полікристалів Bi1-ХSbХ у інтервалі концентрацій х = 0.0475 – 0.095(Львівський національний університет імені Івана Франка, 2017) Богданов, Юрій Сергійович; Дорошенко, Ганна Миколаївна; Рогачова, Олена ІванівнаПублікація Size effects and thermoelectric properties of Bi0.98Sb0.02 thin films(Institute of Thermoelectricity National Academy of Sciences of Ukraine, 2020) Rogacheva, E. I.; Novak, K. V.; Orlova, D. S.; Nashchekina, O. N.; Sipatov, A. Yu.; Lisachuk, G. V.The room-temperature dependences of thermoelectric properties (the Seebeck coefficient S, the electrical conductivity σ, the Hall coefficient RH, and the thermoelectric power factor P = S2·σ) on the thickness (d = 5 - 250 nm) of the Bi0.98Sb0.02 solid solution thin films grown on mica substrates by thermal evaporation in vacuum from a single source were obtained. It is shown that the monotonic component of the σ(d) dependence is well described within the framework of the Fuchs-Sondheimer theory for the classical size effect. The presence of an oscillating component in the d-dependences of σ, S, RH and S2·σ is attributed to the manifestation of the quantum size effect, and the experimentally determined period of quantum oscillations Δd = 45 ± 5 nm is in good agreement with the Δd value calculated theoretically within the framework of the model of an infinitely deep potential well. Bibl. 77, Fig. 1.Публікація Thickness-dependent quantum oscillations of the transport properties in bismuth selenide thin films(Elsevier, 2019) Rogacheva, E. I.; Menshikova, S. I.; Sipatov, A. Yu.; Nashchekina, O. N.The objects of the present study were thin n-Bi2Se3 films with thicknesses d = 10–100 nm, grown by thermal evaporation of n-Bi2Se3 crystals in vacuum onto heated glass substrates. The room temperature d-dependences of the Seebeck coefficient, the Hall coefficient, and the electrical conductivity of the films exhibited an oscillatory behavior, which we attribute to quantum size effects. Such interpretation of the results is supported by the fact that experimentally determined values of the oscillation period are in quite good agreement with the theoretically calculated ones. We suggest that the large amplitude and undamped character of the oscillations in the studied range of thicknesses are connected with the topologically protected gapless surface states of Bi2Se3. The observed oscillatory character of the d-dependences of the transport coefficients should be taken into account when 2D-structures are applied in nanothermoelectricity and other fields of nanoscience and nanotechnology.Документ Класичний розмірний ефект у плівках Bi2(Te0.9Se0.1)3(Інститут термоелектрики НАН та МОН України, 2020) Рогачова, Олена Іванівна; Новак, К. В.; Дорошенко, Ганна Миколаївна; Саєнко, С. О.; Сіпатов, Олександр Юрійович; Меньшов, Юрій ВалентиновичДокумент Виготовлення надтонких плівок телуриду вісмуту(ТОВ "Планета-Прінт", 2020) Новак, К. В.; Дорошенко, Ганна Миколаївна; Рогачова, Олена Іванівна; Сіпатов, Олександр ЮрійовичПублікація Structure of thermally evaporated bismuth selenide thin films(Науково-технологічний комплекс "Інститут монокристалів", 2018) Rogacheva, E. I.; Fedorov, A. G.; Krivonogov, S. I.; Mateychenko, P. V.; Dobrotvorskay, M. V.; Garbuz, A. S.; Nashchekina, O. N.; Sipatov, A. Yu.The Bi₂Se₃ thin films with thicknesses d = 7-420 nm were grown by thermal evaporation in vacuum of stoichiometric n-Bi₂Se₃ crystals onto heated glass substrates under optimal technological conditions determined by the authors. The growth mechanism, microstructure, and crystal structure of the prepared thin films were studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. It was established that the prepared thin films were polycrystalline, with composition close to the stoichiometric one, did not contain any phases apart from Bi₂Se₃, were of a high structural quality, and the preferential growth direction [001] corresponded to the direction of a trigonal axis C₃ in a hexagonal lattice. The films, like the initial crystal, exhibited n-type conductivity. It was shown that with increasing film thickness, the grain size and the film roughness remain practically the same at thicknesses d < 100 nm, and after that increase, reaching their saturation values at d ~ 300 nm. It follows from the results obtained in this work that using the method of thermal evaporation in vacuum from a single source, one can prepare thin n-Bi₂Se₃ films of a sufficiently high structural quality with a composition close to the stoichiometric one and the preferential growth orientation.